N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’technology • Very low on-state resistance • Fast switching • Low thermal resistance • Logic level compatible Appl

文件：107.39 Kbytes 页数：11 Pages

PHI

飞利浦

N-channel enhancement mode field-effect transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP55N03LTA in a SOT78 (TO-220AB) PHB55N03LTA in a SOT404 (D2-PAK) PHD55N03LTA in a SOT428 (D-PAK). Features ■ Low on-state resistance ■ Fast switching.

文件：296.3 Kbytes 页数：14 Pages

PHI

飞利浦

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a

文件：57.28 Kbytes 页数：8 Pages

PHI

飞利浦

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies

文件：51.88 Kbytes 页数：7 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.9Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.89 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7.2A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.0Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.72 Kbytes 页数：2 Pages

ISC

无锡固电

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power

文件：54.16 Kbytes 页数：7 Pages

PHI

飞利浦

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies

文件：21.11 Kbytes 页数：4 Pages

PHI

飞利浦

TRANSIENT ABSORPTION ZENER

文件：80.24 Kbytes 页数：2 Pages

Microsemi

美高森美

Transient Voltage Suppressor, Unidirectional

FEATURES: ♦ Equivalent Industry Standard Part Numbers – PHP8.4 to PHP500 & PIP8.4 to PIP500 ♦ 7,500 and 15,000 Watts Peak Pulse Power Dissipation ♦ Available in ranges from 8.4 to 500 Volts ♦ Each device is 100 tested ♦ Designed for Military (PHP Series) and Commercial (PIP Series)

文件：52.56 Kbytes 页数：3 Pages

SENSITRON