Nexperia B.V. All rights reserved [NEXPERIA]^1325

1.1 General description Dual intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features an

文件：778.52 Kbytes 页数：12 Pages

NEXPERIA

安世

N-channel TrenchMOS standard level FET

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Features ■ Standard level threshold ■ Very low on-state resistance. Applications ■ Motors, lamps, solenoids ■ Uninterruptible power supplies ■ DC-to-DC converters ■ General ind

文件：93.72 Kbytes 页数：13 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.1mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.55 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 23A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 72mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.08 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance Applications:- • d.c. to d.c. converters • switched mode power s

文件：99.37 Kbytes 页数：12 Pages

PHI

飞利浦

N-channel TrenchMOS standard level FET

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Features ■ Low on-state resistance ■ Low thermal resistance. Applications ■ DC-to-DC converters ■ Switched-mode power supplies.

文件：90.69 Kbytes 页数：12 Pages

PHI

飞利浦

N-channel TrenchMOS standard level FET

General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ Higher ope

文件：220.3 Kbytes 页数：13 Pages

恩XP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 23A@ TC=25℃ ·Drain Source Voltage -VDSS= 110V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 70mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.86 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits H

文件：333.96 Kbytes 页数：14 Pages

NEXPERIA

安世

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 23A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 90mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.15 Kbytes 页数：2 Pages

ISC

无锡固电