Dual P-channel enhancement mode MOS transistor

DESCRIPTION Two P-channel enhancement mode MOS transistors in an 8-pin plastic SOT96-1 (SO8) package. FEATURES • High-speed switching • No secondary breakdown • Very low on-state resistance. APPLICATIONS • Motor driver • Power management • DC-DC converters • General purpose switching.

文件：54.58 Kbytes 页数：8 Pages

PHI

飞利浦

TRANSIENT ABSORPTION ZENER

文件：80.24 Kbytes 页数：2 Pages

Microsemi

美高森美

ac power bus voltage suppressor

Description The PHP and PIP Series of devices are designed in accordance with DOD-STD-1399, section 300 interface standard and MIL-STD704A for shipboard systems, electrical power and alternating current. When large voltage transients endanger voltage sensitive components, this series provides r

文件：377.49 Kbytes 页数：5 Pages

PROTEC

AC POWER BUS VOLTAGE SUPPRESSOR

MECHANICAL CHARACTERISTICS ✔ Hermetically Sealed Glass to Metal Sub-Assemblies (PHP) ✔ Sub-Assemblies are Packaged in Molded Epoxy Case (PIP) ✔ Weight 46 grams (Approximate) ✔ Flammability rating UL 94V-0 ✔ Device Marking: Logo & Part Number ✔ Screening Available Upon Request - The PHP &

文件：61.55 Kbytes 页数：4 Pages

PROTEC

N-channel TrenchMOS transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Features ■ Very low on-state resistance ■ Fast switching. Applications ■ Switched mode power supplies ■ DC to DC converters.

文件：334.21 Kbytes 页数：15 Pages

PHI

飞利浦

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.

文件：54.59 Kbytes 页数：7 Pages

PHI

飞利浦

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.

文件：54.59 Kbytes 页数：7 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 22A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 80mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.19 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 75mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.71 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS standard level FET

General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ Low conduc

文件：383.23 Kbytes 页数：12 Pages

恩XP