N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. FEATURES • ’Trench’ technology •

文件：111.85 Kbytes 页数：12 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.83 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.97 Kbytes 页数：2 Pages

ISC

无锡固电

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP130N03LT is supp

文件：51.49 Kbytes 页数：6 Pages

PHI

飞利浦

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a

文件：59.23 Kbytes 页数：8 Pages

PHI

飞利浦

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP13N40E is supplie

文件：104.84 Kbytes 页数：10 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 14A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.35Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.95 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.2mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.16 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.79 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 14A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.23Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.95 Kbytes 页数：2 Pages

ISC

无锡固电