TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a

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PHI

飞利浦

TrenchMOS transistor Standard level FET

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文件：1.10923 Mbytes 页数：7 Pages

VBSEMI

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文件：1.12555 Mbytes 页数：7 Pages

ROHM

罗姆

N-Channel 30 V (D-S) MOSFET

文件：1.1084 Mbytes 页数：7 Pages

VBSEMI

微碧半导体