TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a

文件：59.23 Kbytes 页数：8 Pages

PHI

PHI

TrenchMOS transistor Standard level FET

恩XP

4.5V Drive Nch MOSFET

文件：1.12555 Mbytes 页数：7 Pages

ROHM

罗姆

Switching (30V, 13A)

● Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). ● Application Power switching, DC/DC converter. ● Structure Silicon N-channel MOS FET

文件：60.1 Kbytes 页数：4 Pages

ROHM

罗姆

Nch 30V 13A Power MOSFET

文件：2.57068 Mbytes 页数：14 Pages

ROHM

罗姆