| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
PHP15N06E | PowerMOS transistor GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelope. ThedeviceisintendedforuseinSwitchedModePowerSupplies(SMPS),motorcontrol,welding,DC/DCandAC/DCconverters,andinautomotiveandgeneralpurposeswitchingapplications. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | |
N-CHANNELENHANCEMENTMODELOWTHRESHOLDPOWERMOSTRANSISTOR DESCRIPTION TheUTC15N06usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *RDS(ON) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
15A,60VN-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
60VN-ChannelEnhancementModeMOSFET | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
N-ChannelMOSFET55V,15A,0.090廓 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelEnhancementModeFieldEffectTransistor Features •15A,60V(SeeNote),RDS(on) | HuashanHuashan Electronic Devices Co 华汕电子器件 | Huashan | ||
TMOSPOWERFET15AMPERES | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
TMOSPOWERFET15AMPERES TMOSV™PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesth | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
PowerFieldEffectTransistor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
TMOSPOWERFET15AMPERES60VOLTSRDS(on)=0.085OHM TMOSVPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and6 | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
TMOSPOWERFET15AMPERES60VOLTS TMOSVPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and6 | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
TMOSPOWERFET15AMPERES60VOLTS TMOSVPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and6 | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
PowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
TMOSPOWERFET15AMPERES60VOLTSRDS(on)=0.085OHM TMOSVPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and6 | MotorolaMotorola, Inc 摩托罗拉 | Motorola |
详细参数
- 型号：
PHP15N06E
- 制造商：
PHILIPS
- 制造商全称：
NXP Semiconductors
- 功能描述：
PowerMOS transistor
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NXP |
23+ |
TO-220 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
23+ |
N/A |
36300 |
正品授权货源可靠 |
询价 | |||
NXP |
20+ |
TO-220 |
90000 |
全新原装正品/库存充足 |
询价 | ||
飞利浦 |
2023+ |
TO-220 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
PHILIPS |
2020+ |
SOT78(TO-220) |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
isc |
2024 |
TO-220 |
5000 |
国产品牌isc,可替代原装 |
询价 | ||
PHILIPS |
2023+ |
SOT78(TO-220) |
16800 |
芯为只有原装,公司现货 |
询价 | ||
NXP-恩智浦 |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
PHI |
24+ |
TO-220 |
5000 |
只做原装公司现货 |
询价 | ||
PHI |
2320+ |
TO-220 |
562000 |
16年只做原装原标渠道现货终端BOM表可配单提供样品 |
询价 |
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