PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.

文件：54.21 Kbytes 页数：7 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.13Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.7 Kbytes 页数：2 Pages

ISC

无锡固电

PowerMOS transistor

GENERAL DESCRIPTION\nN-channel enhancement mode field-effect power transistor in a plastic envelope.\nThe device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.

恩XP

PowerMOS transistor Isolated version of PHP20N06E

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.

文件：57.87 Kbytes 页数：7 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=13A@ TC=25℃ · Drain Source Voltage -VDSS=60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.08Ω(Max)@VGS= 10V DESCRIPTION · Switch Mode Power supplies · Motor control, welding, DC/DC and AC/DC converters · Automotive and general purpose switching applica

文件：280.84 Kbytes 页数：2 Pages

ISC

无锡固电

60V N-Channel Enhancement Mode MOSFET

文件：153.75 Kbytes 页数：4 Pages

PANJIT

強茂