PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies

文件：54.15 Kbytes 页数：7 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.34 Kbytes 页数：2 Pages

ISC

无锡固电

PowerMOS transistor

恩XP

N-Ch 200V Fast Switching MOSFETs

文件：277.53 Kbytes 页数：4 Pages

UPI

力智电子

StarMOST Power MOSFET

文件：202.72 Kbytes 页数：2 Pages

GOOD-ARK

固锝电子

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.145 Ω ■ AVALANCHERUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE ■ VERY HIGH CURRENT CAPABILITY ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE I2PAK (TO-262) POWE

文件：126.95 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体