AC POWER BUS VOLTAGE SUPPRESSOR

MECHANICAL CHARACTERISTICS ✔ Hermetically Sealed Glass to Metal Sub-Assemblies (PHP) ✔ Sub-Assemblies are Packaged in Molded Epoxy Case (PIP) ✔ Weight 46 grams (Approximate) ✔ Flammability rating UL 94V-0 ✔ Device Marking: Logo & Part Number ✔ Screening Available Upon Request - The PHP &

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PROTEC

Transient Voltage Suppressor, Unidirectional

FEATURES: ♦ Equivalent Industry Standard Part Numbers – PHP8.4 to PHP500 & PIP8.4 to PIP500 ♦ 7,500 and 15,000 Watts Peak Pulse Power Dissipation ♦ Available in ranges from 8.4 to 500 Volts ♦ Each device is 100 tested ♦ Designed for Military (PHP Series) and Commercial (PIP Series)

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SENSITRON

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies

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PHI

飞利浦

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance Applications:- • d.c. to d.c. converters • switched mode power s

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PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 27A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 50mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 27A@ TC=25℃ ·Drain Source Voltage -VDSS= 110V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 50mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.7 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS standard level FET

General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ Higher ope

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恩XP

N-channel TrenchMOS standard level FET

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Features ■ Low on-state resistance ■ Low thermal resistance. Applications ■ DC-to-DC converters ■ Switched-mode power supplies.

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PHI

飞利浦

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits H

文件：774 Kbytes 页数：13 Pages

NEXPERIA

安世

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits I

文件：776.28 Kbytes 页数：13 Pages

NEXPERIA

安世