NPN power transistor with integrated diode

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PHI

PHI

Silicon Diffused Power Transistor

GENERAL DESCRIPTION The PHE13005 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

文件：69.14 Kbytes 页数：7 Pages

PHI

PHI

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The devices are is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. ■ MEDIUM VOLT

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STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ Hi

文件：313.14 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体