PHD27NQ10T

N-channel TrenchMOS transistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Lowthermalresistance Applications:- •d.c.tod.c.converters •switchedmodepowers

PHB27NQ10T

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Lowthermalresistance Applications:- •d.c.tod.c.converters •switchedmodepowers

PHB27NQ10T

iscN-ChannelMOSFETTransistor

·DESCRIPTION ·DrainCurrentID=28A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=50mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ·APPLICATIONS ·Generalpurpose

PHB27NQ10T

N-channelTrenchMOSstandardlevelFET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits 

PHP27NQ10T

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Lowthermalresistance Applications:- •d.c.tod.c.converters •switchedmodepowers