NPN Silicon Power Transistors

for high-voltage, high-speed power switching applications.

文件：145.15 Kbytes 页数：2 Pages

SEMTECH_ELEC

先之科半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The devices are is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. ■ MEDIUM VOLT

文件：78.52 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

■ MEDIUM VOLTAGE CAPABILITY ■ NPN TRANSISTORS ■ LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ■ VERY HIGH SWITCHING SPEED ■ THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX ”-1”) APPLICATIONS: ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING

文件：272.2 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

丝印：13005A；Package：TO-220；High voltage fast-switching NPN power transistor

Features ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies Description This device is manufactured using high voltage multi epitaxial

文件：204.45 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor

文件：234.22 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

高压快速切换NPN功率晶体管

This device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. • Low spread of dynamic parameters \n• Minimum lot-to-lot spread for reliable operation \n• Very high switching speed;

ST

意法半导体

Package：TO-220-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 400V 4A TO220

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

■ MEDIUM VOLTAGE CAPABILITY ■ NPN TRANSISTORS ■ LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ■ VERY HIGH SWITCHING SPEED ■ THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX ”-1”) APPLICATIONS: ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING

文件：272.2 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor

Features ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies Description This device is manufactured using high voltage multi epitaxial

文件：204.45 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The devices are is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. ■ MEDIUM VOLT

文件：78.52 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体