HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The devices are is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. ■ MEDIUM VOLT

文件：78.52 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

ST

意法半导体

High voltage fast-switching NPN power transistor

文件：207.88 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

■ MEDIUM VOLTAGE CAPABILITY ■ NPN TRANSISTORS ■ LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ■ VERY HIGH SWITCHING SPEED ■ THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX ”-1”) APPLICATIONS: ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING

文件：272.2 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The devices are is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. ■ MEDIUM VOLT

文件：78.52 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体