High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a hollow emitter structure to enhance switching speeds. Features ■ Low spread of dynamic parameters ■ High voltage capability ■ Minimum lo

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STMICROELECTRONICS

意法半导体

丝印：13009-L；Package：TO-220；High voltage fast-switching NPN power transistor

Features ■ Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Switch mode power supplies Description The device is manufactured using high voltage multi-epitaxial planar technology fo

文件：166.43 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

高压快速切换NPN功率晶体管

The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a hollow emitter structure to enhance switching speeds. • Low spread of dynamic parameters \n• Minimum lot-to-lot spread for reliable operation \n• High voltage capability \n• Very high switching speed;

ST

意法半导体

Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 400V 12A TO220

STMICROELECTRONICS

意法半导体