HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features • DC curr

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STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

• FULLY CHARACTERIZED AT 125 °C\n• VERY HIGH SWITCHING SPEED\n• IMPROVED SPECIFICATION: LOWER LEAKAGE CURRENTTIGHTER GAIN RANGE DC CURRENT GAIN PRESELECTIONTIGHTER STORAGE TIME RANGE\n• NPN TRANSISTOR• HIGH VOLTAGE CAPABILITY\n• MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION\n• LARGE RBSOA\n• LOW ;

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意法半导体

Package：TO-220-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 400V 8A TO220

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure to enhance switching speeds. ■ IMPROVED SPECIFICATION: - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE

文件：215.66 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure to enhance switching speeds. ■ IMPROVED SPECIFICATION: - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE

文件：222.57 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure to enhance switching speeds. ■ HIGH VOLTAGE CAPABILITY ■ NPN TRANSISTOR ■ LOW SPREAD OF DYNAMIC PARAMETERS ■

文件：68.05 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure to enhance switching speeds ■ HIGH VOLTAGE CAPABILITY ■ NPN TRANSISTOR ■ LOW SPREAD OF DYNAMIC PARAMETERS ■

文件：75.47 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure to enhance switching speeds ■ HIGH VOLTAGE CAPABILITY ■ NPN TRANSISTOR ■ LOW SPREAD OF DYNAMIC PARAMETERS ■

文件：75.47 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

高压快速切换NPN功率晶体管

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. \n\n It uses a Cellular Emitter structure to enhance switching speeds. • FULLY CHARACTERIZED AT 125 °C \n• VERY HIGH SWITCHING SPEED \n• IMPROVED SPECIFICATION:LOWER LEAKAGE CURRENTTIGHTER GAIN RANGE DC CURRENT GAIN PRESELECTIONTIGHTER STORAGE TIME RANGE \n• INTEGRATED FREE-WHEELING DIODE \n• HIGH VOLTAGE CAPABILITY \n• MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ;

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意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

• FULLY CHARACTERIZED AT 125 °C\n• VERY HIGH SWITCHING SPEED\n• FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING\n• IMPROVED SPECIFICATION:LOWER LEAKAGE CURRENT TIGHTER GAIN RANGE DC CURRENT GAIN PRESELECTIONTIGHTERSTORAGE TIME RANGE \n• INTEGRATED FREE-WHEELING DIODE• HIGH VOLTAGE CAPABIL;

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意法半导体