HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure to enhance switching speeds. ■ IMPROVED SPECIFICATION: - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE

文件：215.66 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure to enhance switching speeds. ■ IMPROVED SPECIFICATION: - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE

文件：222.57 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

高压快速切换NPN功率晶体管

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. \n\n It uses a Cellular Emitter structure to enhance switching speeds. • FULLY CHARACTERIZED AT 125 °C \n• VERY HIGH SWITCHING SPEED \n• IMPROVED SPECIFICATION:LOWER LEAKAGE CURRENTTIGHTER GAIN RANGE DC CURRENT GAIN PRESELECTIONTIGHTER STORAGE TIME RANGE \n• INTEGRATED FREE-WHEELING DIODE \n• HIGH VOLTAGE CAPABILITY \n• MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ;

ST

意法半导体

Package：TO-220-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 400V 8A TO220

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

• FULLY CHARACTERIZED AT 125 °C\n• VERY HIGH SWITCHING SPEED\n• FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING\n• IMPROVED SPECIFICATION:LOWER LEAKAGE CURRENT TIGHTER GAIN RANGE DC CURRENT GAIN PRESELECTIONTIGHTERSTORAGE TIME RANGE \n• INTEGRATED FREE-WHEELING DIODE• HIGH VOLTAGE CAPABIL;

ST

意法半导体

Package：TO-220-3 整包；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 400V 8A TO-220FP

STMICROELECTRONICS

意法半导体