ST13005_01中文资料意法半导体数据手册PDF规格书

■ MEDIUM VOLTAGE CAPABILITY

■ NPN TRANSISTORS

■ LOW SPREAD OF DYNAMIC PARAMETERS

■ MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

■ VERY HIGH SWITCHING SPEED

■ THROUGH-HOLE I2PAK (TO-262) POWER

PACKAGE IN TUBE (SUFFIX ”-1”)

APPLICATIONS:

■ ELECTRONIC BALLASTS FOR

FLUORESCENT LIGHTING

■ SWITCH MODE POWER SUPPLIES

DESCRIPTION

The devices are manufactured using high voltage

Multi Epitaxial Planar technology for high

switching speeds and medium voltage capability.

They use a Cellular Emitter structure with planar

edge termination to enhance switching speeds

while maintaining the wide RBSOA.