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PF01410

MOS FET Power Amplifier Module for GSM Handy Phone

Features • 4.8 V operation 2 stage amplifier • Small package • High efficiency : 45 Typ • High speed switching : 1 µsec Application • For GSM class4 890 to 915 MHz

文件:25.36 Kbytes 页数:4 Pages

HitachiHitachi Semiconductor

日立日立公司

PF01410A

MOS FET Power Amplifier Module for GSM Handy Phone

Features • 4.8 V operation 2 stage amplifier • Small package • High efficiency : 45 Typ • High speed switching : 1 µsec Application • For GSM class4 890 to 915 MHz

文件:25.36 Kbytes 页数:4 Pages

HitachiHitachi Semiconductor

日立日立公司

PF01411

MOS FET Power Amplifier Module for E-GSM Handy Phone

Features • High gain 3stage amplifier : 0 dBm input • Lead less thin & Small package : 2 mm Max, 0.2cc • High efficiency : 45 Typ at 3.8 W • Wide gain control range : 90 dB Typ Application • For E-GSM class4 880 to 915 MHz • For 4.8V nominal battery use

文件:25.87 Kbytes 页数:4 Pages

HitachiHitachi Semiconductor

日立日立公司

PF01411A

MOS FET Power Amplifier Module for E-GSM Handy Phone

Features • High gain 3stage amplifier : 0 dBm input • Lead less thin & Small package : 2 mm Max, 0.2cc • High efficiency : 45 Typ at 3.8 W • Wide gain control range : 90 dB Typ Application • For E-GSM class4 880 to 915 MHz • For 4.8V nominal battery use

文件:25.87 Kbytes 页数:4 Pages

HitachiHitachi Semiconductor

日立日立公司

PF01411B

MOS FET Power Amplifier Module for E-GSM Handy Phone

Features • High gain 3stage amplifier : 0 dBm input • Lead less thin & Small package : 2 mm Max, 0.2cc • High efficiency : 45 Typ at 35.5 dBm • Wide gain control range : 70 dB Typ Application • For E-GSM class4 880 to 915 MHz • For 3.5 V nominal battery use

文件:26.54 Kbytes 页数:4 Pages

HitachiHitachi Semiconductor

日立日立公司

PF01412

MOS FET Power Amplifier Module for E-GSM Handy Phone

Features • High gain 3stage amplifier : 0 dBm input • Lead less thin & Small package : 2 mm Max, 0.2cc • High efficiency : 45 Typ at 3.8 W • Wide gain control range : 90 dB Typ Application • For GSM class4 890 to 915 MHz • For 5.5V nominal DC/DC converter use

文件:25.87 Kbytes 页数:4 Pages

HitachiHitachi Semiconductor

日立日立公司

PF01412A

MOS FET Power Amplifier Module for E-GSM Handy Phone

Features • High gain 3stage amplifier : 0 dBm input • Lead less thin & Small package : 2 mm Max, 0.2cc • High efficiency : 45 Typ at 3.8 W • Wide gain control range : 90 dB Typ Application • For GSM class4 890 to 915 MHz • For 5.5V nominal DC/DC converter use

文件:25.87 Kbytes 页数:4 Pages

HitachiHitachi Semiconductor

日立日立公司

PF01411

MOS FET Power Amplifier Module for E-GSM Handy Phone

HITACHI

日立

PF01411B

MOS FET Power Amplifier Module for E-GSM Handy Phone

HITACHI

日立

PF01412A

MOS FET Power Amplifier Module for E-GSM Handy Phone

HITACHI

日立

详细参数

  • 型号:

    PF0141

  • 制造商:

    HITACHI

  • 制造商全称:

    Hitachi Semiconductor

  • 功能描述:

    MOS FET Power Amplifier Module for E-GSM Handy Phone

供应商型号品牌批号封装库存备注价格
HITACHI
15+
QFN
6698
询价
HIT
ROHS
13352
一级代理 原装正品假一罚十价格优势长期供货
询价
NA
25+
原厂原封可拆样
54687
百分百原装现货 实单必成
询价
HITACHI/日立
23+
QFN
110000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
HITACHI
24+
SMD
585
询价
HITACHI
25+
SMD
2679
原装优势!绝对公司现货!可长期供货!
询价
HITACHI
2023+
3000
进口原装现货
询价
PULSE
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
PULSE/普思
2450+
SMD
6540
只做原厂原装现货或订货假一赔十!
询价
HITACHI/日立
24+
QFN
20
原装现货100%现货
询价
更多PF0141供应商 更新时间2025-12-17 13:01:00