MOS FET Power Amplifier Module for VHF Band

Features • Small package: 30 × 10 × 5.9 mm • High efficiency: 55 Typ • Low power control current: 0.5 mA Max

文件：36.84 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

日立日立公司

MOS FET Power Amplifier Module for VHF Band

• Small package: 30 × 10 × 5.9 mm\n• High efficiency: 55% Typ\n• Low power control current: 0.5 mA Max ;

HITACHI

日立

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文件：20.42 Kbytes 页数：1 Pages

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Features: * Low VSWR * Low PIM Applications: * Wireless * Transmitter * Laboratory Test * Radar

文件：130.28 Kbytes 页数：1 Pages

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Low PIM Terminations

Features: * Low VSWR * Low PIM Applications: * Wireless * Transmitter * Laboratory Test * Radar

文件：172.27 Kbytes 页数：1 Pages

QUALWAVE

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