MOS FET Power Amplifier Module for VHF Band

Features • Small package: 30 × 10 × 5.9 mm • High efficiency: 55 Typ • Low power control current: 0.5 mA Max

文件：36.84 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

MOS FET Power Amplifier Module for VHF Band

• Small package: 30 × 10 × 5.9 mm\n• High efficiency: 55% Typ\n• Low power control current: 0.5 mA Max ;

HITACHI

日立

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

文件：1.60012 Mbytes 页数：12 Pages

TECCOR

SAW Resonator 359.4 MHz SMD 3.8X3.8 mm

文件：305.18 Kbytes 页数：6 Pages

TAI-SAW

嘉硕科技

Transient Voltage Protection Device 75 to 320 Volts

Features · Oxide-Glass passivated Junction · Bi-Directional protection in a single device · Surge capabilities up to 50A@10/1000us or 150A@8/20us · High Off-State impedance and Low On-State voltage · Plastic material has UL flammability classification 94V -0

文件：382 Kbytes 页数：4 Pages

MCC