MOS FET Power Amplifier Module for UHF Band

Features • Small package: 30 × 10 × 5.9 mm • High output power at low voltage: 2 W Typ at 4.8 V • Low power control current: 200 µA Typ

文件：47.13 Kbytes 页数：12 Pages

HitachiHitachi Semiconductor

日立日立公司

MOS FET Power Amplifier Module for UHF Band

• Small package: 30 × 10 × 5.9 mm\n• High output power at low voltage: 2 W Typ at 4.8 V\n• Low power control current: 200 µA Typ ;

HITACHI

日立

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