MOS FET Power Amplifier Module for E-GSM Handy Phone

Features • High gain 3stage amplifier : 0 dBm input • Lead less thin & Small package : 2 mm Max, 0.2cc • High efficiency : 45 Typ at 3.8 W • Wide gain control range : 90 dB Typ Application • For GSM class4 890 to 915 MHz • For 5.5V nominal DC/DC converter use

文件：25.87 Kbytes 页数：4 Pages

HITACHIHitachi Semiconductor

日立日立公司

MOS FET Power Amplifier Module for E-GSM Handy Phone

Features • High gain 3stage amplifier : 0 dBm input • Lead less thin & Small package : 2 mm Max, 0.2cc • High efficiency : 45 Typ at 3.8 W • Wide gain control range : 90 dB Typ Application • For GSM class4 890 to 915 MHz • For 5.5V nominal DC/DC converter use

文件：25.87 Kbytes 页数：4 Pages

HITACHIHitachi Semiconductor

日立日立公司

MOS FET Power Amplifier Module for E-GSM Handy Phone

HITACHI

日立

UTG - Metalok Bantam

Description “UTG” Metalok Bantam plastic industrial circular connectors with metal coupling are a range of multiway connectors to provide the complete answer to the need for leightweight, robust circular connectors. They are available in 8 shell sizes, 11 insert arrangements all intermateab

文件：164.46 Kbytes 页数：4 Pages

EATON

伊顿

UTG - Metalok Bantam

Description “UTG” Metalok Bantam plastic industrial circular connectors with metal coupling are a range of multiway connectors to provide the complete answer to the need for leightweight, robust circular connectors. They are available in 8 shell sizes, 11 insert arrangements all intermateab

文件：164.46 Kbytes 页数：4 Pages

EATON

伊顿

wide range in current capability

文件：2.97035 Mbytes 页数：101 Pages

FCI-CONNECTOR