40-860 MHz. Ultra-linear Opto Receiver Amplifier

40-860 MHz. Ultra-linear Opto Receiver Amplifier Features Ultra High Linearity with Low Noise Independent DC Supply pin for Optical diode (PFO4 Model)

文件：40.42 Kbytes 页数：1 Pages

MACOM

MOS FET Power Amplifier Module for VHF Band

Features • Small package: 30 × 10 × 5.9 mm • High efficiency: 55 Typ • Low power control current: 0.5 mA Max

文件：36.84 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

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MOS FET Power Amplifier Module for VHF Band

Features • Small package: 30 × 10 × 5.9 mm • High efficiency: 50 Typ • Low power control current: 0.5 mA Max Application VHF Band 150 to 174 MHz

文件：42.13 Kbytes 页数：11 Pages

HitachiHitachi Semiconductor

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MOS FET Power Amplifier Module for VHF Band

MOS FET Power Amplifier Module for VHF Band Features • Small package: 30 ×10 ×5.9 mm • Low operation voltage: 7 W at 7.2 V • High efficiency: 55 Typ • Low power control current: 0.5 mA Max

文件：57.16 Kbytes 页数：16 Pages

HitachiHitachi Semiconductor

日立日立公司

MOS FET Power Amplifier Module for VHF Band

MOS FET Power Amplifier Module for VHF Band Features • Small package: 30 ×10 ×5.9 mm • Low operation voltage: 7 W at 7.2 V • High efficiency: 55 Typ • Low power control current: 0.5 mA Max

文件：57.16 Kbytes 页数：16 Pages

HitachiHitachi Semiconductor

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EMI Filtering TVS For USB Port

EMI Filtering TVS For USB Port FEATURES EMI/RFI filtering. ESD Protection to IEC 61000-4-2 Level 4. Low insertion loss. Good attenuation of high frequency signals. Low clamping voltage. Low operating and leakage current.

文件：432.1 Kbytes 页数：1 Pages

KEC

KEC(Korea Electronics)

MOS FET Power Amplifier Module

Features • Small package: 30 × 10 × 5.9 mm • High efficiency: 43 Typ at 9.6 V 40 Typ at 4.8 V • Low power control current: 150 µA Typ

文件：37.04 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

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MOS FET Power Amplifier Module for UHF Band

Features • Small package: 30 × 10 × 5.9 mm • High output power at low voltage: 2 W Typ at 4.8 V • Low power control current: 200 µA Typ

文件：47.13 Kbytes 页数：12 Pages

HitachiHitachi Semiconductor

日立日立公司

MOS FET Power Amplifier Module for UHF Band

Features • Small package: 30 × 10 × 5.9 mm • High output power at low voltage: 2 W Typ at 4.8 V • Low power control current: 200 µA Typ

文件：47.13 Kbytes 页数：12 Pages

HitachiHitachi Semiconductor

日立日立公司

MOS FET Power Amplifier Module for UHF Band

Features • Small package: 30 × 10 × 5.9 mm • High output power at low voltage: 2 W Typ at 4.8 V • Low power control current: 200 µA Typ

文件：47.13 Kbytes 页数：12 Pages

HitachiHitachi Semiconductor

日立日立公司