MOS FET Power Amplifier Module

Features • Small package: 30 × 10 × 5.9 mm • High efficiency: 43 Typ at 9.6 V 40 Typ at 4.8 V • Low power control current: 150 µA Typ

文件：37.04 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

日立日立公司

MOS FET Power Amplifier Module for UHF Band

• Small package: 30 × 10 × 5.9 mm\n• High efficiency: 43% Typ at 9.6 V\n                       40% Typ at 4.8 V\n• Low power control current: 150 µA Typ ;

HITACHI

日立

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features • Low Forward Voltage Drop • Fast Switching • Ultra-Small Surface Mount Package • PN Junction Guard Ring for Transient and ESD Protection • Lead Free/RoHS Compliant (Note 3) • Green Device (Note 4 and 5)

文件：59.72 Kbytes 页数：3 Pages

DIODES

美台半导体

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features • Low Forward Voltage Drop • Fast Switching • Ultra-Small Surface Mount Package • PN Junction Guard Ring for Transient and ESD Protection • Lead Free/RoHS Compliant (Note 3) • Green Device (Note 4 and 5)

文件：59.72 Kbytes 页数：3 Pages

DIODES

美台半导体

SURFACE MOUNT SCHOTTKY BARRIER DIODE

文件：83.34 Kbytes 页数：3 Pages

DIODES

美台半导体