MOS FET Power Amplifier Module for E-GSM Handy Phone

Features • High gain 3stage amplifier : 0 dBm input • Lead less thin & Small package : 2 mm Max, 0.2cc • High efficiency : 45 Typ at 3.8 W • Wide gain control range : 90 dB Typ Application • For E-GSM class4 880 to 915 MHz • For 4.8V nominal battery use

文件：25.87 Kbytes 页数：4 Pages

HitachiHitachi Semiconductor

日立日立公司

MOS FET Power Amplifier Module for E-GSM Handy Phone

HITACHI

日立

MOS FET Power Amplifier Module for E-GSM Handy Phone

Features • High gain 3stage amplifier : 0 dBm input • Lead less thin & Small package : 2 mm Max, 0.2cc • High efficiency : 45 Typ at 3.8 W • Wide gain control range : 90 dB Typ Application • For E-GSM class4 880 to 915 MHz • For 4.8V nominal battery use

文件：25.87 Kbytes 页数：4 Pages

HitachiHitachi Semiconductor

日立日立公司

MOS FET Power Amplifier Module for E-GSM Handy Phone

Features • High gain 3stage amplifier : 0 dBm input • Lead less thin & Small package : 2 mm Max, 0.2cc • High efficiency : 45 Typ at 35.5 dBm • Wide gain control range : 70 dB Typ Application • For E-GSM class4 880 to 915 MHz • For 3.5 V nominal battery use

文件：26.54 Kbytes 页数：4 Pages

HitachiHitachi Semiconductor

日立日立公司

MOS FET Power Amplifier Module for E-GSM Handy Phone

HITACHI

日立