Axial Leaded Hermetically Sealed Fast Rectifier Diode

Description Quick reference data VR = 800 & 1000V IF = 1.8A trr = 300nS IR = 1µA Features ◆ Low reverse recovery time ◆ Glass passivated for hermetic sealing ◆ Low switching losses ◆ Soft, non-snap off, recovery characteristic ◆ Avalanche capability

文件：93.02 Kbytes 页数：3 Pages

SEMTECH

先之科

MOS FET Power Amplifier Module for AMPS Handy Phone

Features • Low voltage operation : 4.6 V • 2 stage amplifier : +8 dBm input • Lead less small package : 0.2 cc • High efficiency : 48 Typ at 1 W • Low power control current : 500 µA Typ

文件：62.04 Kbytes 页数：11 Pages

HITACHIHitachi Semiconductor

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MOS FET Power Amplifier

Features • High stability: Load VSWR = 20 : 1 • Low power control current: 400 µA • Thin package: 5 mmt

文件：61.54 Kbytes 页数：19 Pages

HITACHIHitachi Semiconductor

日立日立公司

MOS FET Power Amplifier Module for Mobile Phone

MOS FET Power Amplifier Module for Mobile Phone Features • High stability: Load VSWR ≈ 20:1 • Low power control current: 400 µA • Thin package: 5 mm t Application PF0031: For NMT900 890 to 925 MHz

文件：55.63 Kbytes 页数：13 Pages

HITACHIHitachi Semiconductor

日立日立公司

MOS FET Power Amplifier

Features • High stability: Load VSWR = 20 : 1 • Low power control current: 400 µA • Thin package: 5 mmt

文件：61.54 Kbytes 页数：19 Pages

HITACHIHitachi Semiconductor

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14 channel configurable power management integrated circuit

The SMARTMOS PF0100Z AEC Q100 grade 2 automotive power management integrated circuit (PMIC) provides a highly programmable/ configurable architecture, with fully integrated power devices and minimal external components. With up to six buck converters, six linear regulators, RTC supply, and coi

文件：1.41881 Mbytes 页数：128 Pages

恩XP

MOS FET Power Amplifier Module for GSM Mobile Phone

Features • Low power control current: 0.9 mA Typ • High speed switching: 1.5 µsec Typ • Wide power control range: 100 dB Typ Application For GSM CLASS2 890 to 915 MHz

文件：51.96 Kbytes 页数：12 Pages

HITACHIHitachi Semiconductor

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MOSFET POWER AMPLIFIER MODULE FOR GSM HANDY PHONE

MOS FET Power Amplifier Module for GSM Handy Phone

文件：246.37 Kbytes 页数：7 Pages

HITACHIHitachi Semiconductor

日立日立公司

MOS FET Power Amplifier Module for GSM Handy Phone

Features • 4.8 V operation 2 stage amplifier • Small package • High efficiency : 45 Typ • High speed switching : 1 µsec Application • For GSM class4 890 to 915 MHz

文件：25.36 Kbytes 页数：4 Pages

HITACHIHitachi Semiconductor

日立日立公司

MOS FET Power Amplifier Module for GSM Handy Phone

Features • 4.8 V operation 2 stage amplifier • Small package • High efficiency : 45 Typ • High speed switching : 1 µsec Application • For GSM class4 890 to 915 MHz

文件：25.36 Kbytes 页数：4 Pages

HITACHIHitachi Semiconductor

日立日立公司