PF0

Axial Leaded Hermetically Sealed Fast Rectifier Diode

Description Quickreferencedata VR=800&1000V IF=1.8A trr=300nS IR=1µA Features ◆Lowreverserecoverytime ◆Glasspassivatedforhermeticsealing ◆Lowswitchinglosses ◆Soft,non-snapoff,recoverycharacteristic ◆Avalanchecapability

PF0

Package：轴向；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 1KV 850MA AXIAL

PF00105A

MOS FET Power Amplifier Module for AMPS Handy Phone

Features •Lowvoltageoperation:4.6V •2stageamplifier:+8dBminput •Leadlesssmallpackage:0.2cc •Highefficiency:48Typat1W •Lowpowercontrolcurrent:500µATyp

PF0030

MOS FET Power Amplifier

Features •Highstability:LoadVSWR=20:1 •Lowpowercontrolcurrent:400µA •Thinpackage:5mmt

PF0031

MOS FET Power Amplifier Module for Mobile Phone

MOSFETPowerAmplifierModuleforMobilePhone Features •Highstability:LoadVSWR≈20:1 •Lowpowercontrolcurrent:400µA •Thinpackage:5mmt Application PF0031:ForNMT900890to925MHz

PF0032

MOS FET Power Amplifier

Features •Highstability:LoadVSWR=20:1 •Lowpowercontrolcurrent:400µA •Thinpackage:5mmt

PF0100Z

14 channel configurable power management integrated circuit

TheSMARTMOSPF0100ZAECQ100grade2automotivepowermanagement integratedcircuit(PMIC)providesahighlyprogrammable/configurable architecture,withfullyintegratedpowerdevicesandminimalexternal components.Withuptosixbuckconverters,sixlinearregulators,RTCsupply, andcoi

PF0121

MOS FET Power Amplifier Module for GSM Mobile Phone

Features •Lowpowercontrolcurrent:0.9mATyp •Highspeedswitching:1.5µsecTyp •Widepowercontrolrange:100dBTyp Application ForGSMCLASS2890to915MHz

PF0140

MOSFET POWER AMPLIFIER MODULE FOR GSM HANDY PHONE

MOSFETPowerAmplifierModuleforGSMHandyPhone

PF01410

MOS FET Power Amplifier Module for GSM Handy Phone

Features •4.8Voperation2stageamplifier •Smallpackage •Highefficiency:45Typ •Highspeedswitching:1µsec Application •ForGSMclass4890to915MHz