MOS FET Power Amplifier

Features • High stability: Load VSWR = 20 : 1 • Low power control current: 400 µA • Thin package: 5 mmt

文件：61.54 Kbytes 页数：19 Pages

HitachiHitachi Semiconductor

日立日立公司

MOS FET Power Amplifier

•  High stability: Load VSWR = 20 : 1\n•  Low power control current: 400 µA\n•  Thin package: 5 mmt;

HITACHI

日立

32-Bit MCU Renesas Advanced (RA) Family Renesas RA2 Series

文件：1.25855 Mbytes 页数：100 Pages

RENESAS

瑞萨

32-Bit MCU based on RISC-V

■ RISC-V Core ● Renesas RISC-V instruction-set architecture (RV32I [MACB]) ● Maximum operating frequency: 48 MHz ● Debug and Trace: RISC-V External Debug Support ● Debug Port: cJTAG ■ Memory ● 128-KB code flash memory ● 4 KB data flash ● 16 KB SRAM ● 128-bit unique ID

文件：1.57659 Mbytes 页数：72 Pages

RENESAS

瑞萨

N-Ch 100V Fast Switching MOSFETs

文件：383.32 Kbytes 页数：5 Pages

UPI

uPI Semiconductor Corp