MOS FET Power Amplifier Module for VHF Band

MOS FET Power Amplifier Module for VHF Band Features • Small package: 30 ×10 ×5.9 mm • Low operation voltage: 7 W at 7.2 V • High efficiency: 55 Typ • Low power control current: 0.5 mA Max

文件：57.16 Kbytes 页数：16 Pages

HITACHIHitachi Semiconductor

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EMI Filtering TVS For USB Port

EMI Filtering TVS For USB Port FEATURES EMI/RFI filtering. ESD Protection to IEC 61000-4-2 Level 4. Low insertion loss. Good attenuation of high frequency signals. Low clamping voltage. Low operating and leakage current.

文件：432.1 Kbytes 页数：1 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

MOS FET Power Amplifier Module

Features • Small package: 30 × 10 × 5.9 mm • High efficiency: 43 Typ at 9.6 V 40 Typ at 4.8 V • Low power control current: 150 µA Typ

文件：37.04 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

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MOS FET Power Amplifier Module for UHF Band

Features • Small package: 30 × 10 × 5.9 mm • High output power at low voltage: 2 W Typ at 4.8 V • Low power control current: 200 µA Typ

文件：47.13 Kbytes 页数：12 Pages

HITACHIHitachi Semiconductor

日立日立公司

MOS FET Power Amplifier Module for UHF Band

Features • Small package: 30 × 10 × 5.9 mm • High output power at low voltage: 2 W Typ at 4.8 V • Low power control current: 200 µA Typ

文件：47.13 Kbytes 页数：12 Pages

HITACHIHitachi Semiconductor

日立日立公司

MOS FET Power Amplifier Module for UHF Band

Features • Small package: 30 × 10 × 5.9 mm • High output power at low voltage: 2 W Typ at 4.8 V • Low power control current: 200 µA Typ

文件：47.13 Kbytes 页数：12 Pages

HITACHIHitachi Semiconductor

日立日立公司

MOS FET Power Amplifier Module for UHF Band

Features • Small package: 30 × 10 × 5.9 mm • High output power at low voltage: 2 W Typ at 4.8 V • Low power control current: 200 µA Typ

文件：47.13 Kbytes 页数：12 Pages

HITACHIHitachi Semiconductor

日立日立公司

MOS FET Power Amplifier Module for UHF Band

Features • Small package: 30 × 10 × 5.9 mm • High output power at low voltage: 2 W Typ at 4.8 V • Low power control current: 200 µA Typ

文件：47.13 Kbytes 页数：12 Pages

HITACHIHitachi Semiconductor

日立日立公司

MOS FET Power Amplifier Module for DCS 1800 Handy Phone

Features • 3stage amplifier • Small package: 0.2cc • High efficiency: 45 Typ • High speed switching: 0.9 µsec Application For DCS 1800 class1 1710 to 1785 MHz.

文件：32.77 Kbytes 页数：5 Pages

HITACHIHitachi Semiconductor

日立日立公司

MOS FET Power Amplifier Module for DCS 1800 Handy Phone

Features • 3stage amplifier • Small package: 0.2cc • High efficiency: 45 Typ • High speed switching: 0.9 µsec Application For DCS 1800 class1 1710 to 1785 MHz.

文件：32.77 Kbytes 页数：5 Pages

HITACHIHitachi Semiconductor

日立日立公司