MOS FET Power Amplifier Module for AMPS Handy Phone

Features • Low voltage operation : 4.6 V • 2 stage amplifier : +8 dBm input • Lead less small package : 0.2 cc • High efficiency : 48 Typ at 1 W • Low power control current : 500 µA Typ

文件：62.04 Kbytes 页数：11 Pages

HITACHIHitachi Semiconductor

日立日立公司

MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone

MOS FET Power Amplifier Module\nfor E-GSM900 and DCS1800 Dual Band Handy Phone •  1 in / 2 out dual band amplifier\n•  Simple external circuit including output matching circuit\n•  Simple band switching and power control\n•  High gain 3stage amplifier : +1 dBm input for GSM, +4.5 dBm input for DCS\n•  Lead less thin & Small package : 11 ×13.75 ×1.8 mm\n•  High efficiency : 45&;

HITACHI

日立

Accessories & Service

文件：158.82 Kbytes 页数：1 Pages

IVO

堡盟电子

Ultra-low Jitter LVCMOS Fanout Buffer/Level Translator

文件：1.52736 Mbytes 页数：15 Pages

TI

德州仪器

Ultra-Low Jitter LVCMOS Fanout Buffer and Level Translator

文件：1.18467 Mbytes 页数：30 Pages

TI

德州仪器

LMK00105 Ultra-Low Jitter LVCMOS Fanout Buffer and Level Translator With Universal

1 Features 1• 5 LVCMOS Outputs, DC to 200 MHz • Universal Input – LVPECL – LVDS – HCSL – SSTL – LVCMOS and LVTTL • Crystal Oscillator Interface – Crystal Input Frequency: 10 to 40 MHz • Output Skew: 6 ps • Additive Phase Jitter – 30 fs at 156.25 MHz (12 kHz to 20 MHz) • Low Propagatio

文件：716.23 Kbytes 页数：32 Pages

TI

德州仪器