PD85050S数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

The PD85050S is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies up to 1 GHz. The PD85050S boasts excellent gain, linearity and reliability thank to ST's latest LDMOS technology mounted in the first true SMD plastic RF power package, the PowerSO-10RF. The superior linearity performance of the PD85050S makes it an ideal solution for car mobile radios. The PowerSO-10 plastic package is designed for high reliability, and is the first ST JEDEC-approved, high power SMD package from ST. It has been specially optimized for RF requirements and offers excellent RF performance and ease of assembly. Mounting recommendations are provided in application note AN1294, available on www.st.com.

特性 Features

Operating frequencies from 1 MHz to 1000 MHz
P
OUT> 50W with 12dB gain @ 870 MHz / 13.6V
Unmatched device for wideband operation
Bi-directional ESD
Excellent Thermal stability
High linearity for TETRA, DMR, SSB modulations
Housed in PowerSO-10RF plastic package
In compliance with the 2002/95/EC1 European directive

简介

PD85050S属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的PD85050S晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。