RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga

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STMICROELECTRONICS

意法半导体

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD55035 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55035 boasts the excellent g

文件：402.81 Kbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD55035 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55035 boasts the excellent g

文件：402.81 Kbytes 页数：22 Pages

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HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

文件：288.66 Kbytes 页数：5 Pages

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RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD55035 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55035 boasts the excellent g

文件：402.81 Kbytes 页数：22 Pages

STMICROELECTRONICS

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35 W, 12.5 V, HF to 1 GHz RF power LDMOS transistor

Features • Common source configuration • POUT = 35 W with 16.9 dB at 500 MHz, 12.5 V • New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial

文件：332.66 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD55035 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55035 boasts the excellent g

文件：402.81 Kbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD55035 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55035 boasts the excellent g

文件：402.81 Kbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

PD57/60-x-1076 Hardware Manual

Features • Supply Voltage +10. . . +30V DC • Up to 3A RMS motor current • Step and direction interface • microPlyer™ to 256 μ-steps • stealthChop™ silent PWM mode • spreadCycle™ smart mixed decay • stallGuard2™ load detection • coolStep™ autom. current scaling • UART con1guration interfac

文件：1.63557 Mbytes 页数：25 Pages

TRINAMIC

PD57/60-1276 Hardware Manual

Features • PANdrive™ smart motor • Supply Voltag +10 to +30V DC • CAN bus interface • TMCL or CANopen protocol • Integrated sixPoint™ ramp motion controller • stealthChop™ silent PWM mode • spreadCycle™ smart mixed decay • stallGuard2™ load detection • coolStep™ autom. current scaling

文件：1.50261 Mbytes 页数：24 Pages

TRINAMIC