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型号	下载订购	功能描述	制造商上传企业	LOGO
PD57030-E	文件：388.45 Kbytes Page：18 Pages	RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga 文件：388.45 Kbytes 页数：18 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57030S	文件：288.66 Kbytes Page：5 Pages	HF to 2000 MHz Class AB Common Source - PowerSO-10RF HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to 文件：288.66 Kbytes 页数：5 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
PD57030S-E	文件：388.45 Kbytes Page：18 Pages	RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga 文件：388.45 Kbytes 页数：18 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57030STR-E	文件：388.45 Kbytes Page：18 Pages	RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga 文件：388.45 Kbytes 页数：18 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57030TR-E	文件：388.45 Kbytes Page：18 Pages	RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga 文件：388.45 Kbytes 页数：18 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57045-E	文件：490.84 Kbytes Page：20 Pages	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent 文件：490.84 Kbytes 页数：20 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57045S	文件：288.66 Kbytes Page：5 Pages	HF to 2000 MHz Class AB Common Source - PowerSO-10RF HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to 文件：288.66 Kbytes 页数：5 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
PD57045S-E	文件：490.84 Kbytes Page：20 Pages	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent 文件：490.84 Kbytes 页数：20 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57045STR-E	文件：490.84 Kbytes Page：20 Pages	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent 文件：490.84 Kbytes 页数：20 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
PD57045TR-E	文件：490.84 Kbytes Page：20 Pages	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent 文件：490.84 Kbytes 页数：20 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

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技术参数

Tolerance：
±20%
Inductance (μH)：
10
Test Condition：
100KHz
DCR (Ω) max.：
0.031
IDC (A)：
10

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市勤思达科技有限公司	PD5428B	PIONEER	09+	QFP	5500	原装无铅,优势热卖	询价
深圳市福安瓯科技有限公司	PD5593A	N/A	25+	QFP	1000	强调现货,随时查询!	询价
深圳市凌旭科技有限公司	PD5592B	PIONEER	2016+	QFP	6000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市粤科源兴科技有限公司	PD509A	KODENSHI	13+	DIP	5638	原装分销	询价
深圳市恒创达实业有限公司	PD5942D	PIONEER	17+	QFP	6200	100%原装正品现货	询价
深圳市毅创腾电子科技有限公司	PD55F80	SanRex	23+	55A800VS	900	全新原装正品,量大可订货!可开17%增值票!价格优势!	询价
深圳市卓越微芯电子有限公司	PD555	TI	25+	QFN24	19	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市欧立现代科技有限公司	PD545AX	TI	24+	TSSOP	6980	原装现货,可开13%税票	询价
齐创科技(上海,北京,青岛)有限公司	PD5966B	PIONEER	23+	DIP	5000	原装正品,假一罚十	询价
深圳市豪迈兴电子有限公司	PD54008L	ST	24+	QFN	5989	公司原厂原装现货假一罚十!特价出售!强势库存!	询价

更多PD5供应商更新时间2026-3-15 11:04:00

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