PNP transistor

DESCRIPTION PNP low VCEsat transistor in a SC-74 plastic package. NPN complement: PBSS4350D. FEATURES • High current capabilities • Low VCEsat. APPLICATIONS • Heavy duty battery powered equipment (Automotive, Telecom and Audio/Video) such as motor and lamp drivers • VCEsat critical applica

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PHI

飞利浦

50 V low VCEsat PNP transistor

General description 150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Features and benefits ■ Excellent ruggedness ■ High efficiency ■ Low Rth providing excellent thermal stability ■ Designed for broadband operation (2500 MHz to 2700 MHz) ■

文件：153.86 Kbytes 页数：9 Pages

恩XP

丝印：53；Package：SC-74；50 V, 3 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350D 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High current capability • High efficiency due to less heat genera

文件：999.14 Kbytes 页数：9 Pages

NEXPERIA

安世

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

丝印：53；Package：SC-74；50 V, 3 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350D-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High current capability • High efficiency due to less heat gene

文件：219.55 Kbytes 页数：9 Pages

NEXPERIA

安世

50 V, 3 A PNP low VCEsat (BISS) transistor

文件：262.66 Kbytes 页数：12 Pages

PHI

飞利浦

50 V, 3 A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350D • Low collector-emitter saturation voltage VCEsat\n• High current capability\n• High efficiency due to less heat generation\n• AEC-Q101 qualified\n• Smaller Printed-Circuit Board (PCB) area than for conventional transistors;

Nexperia

安世

50 V, 3 A PNP low VCEsat transistor

• Low collector-emitter saturation voltage VCEsat\n• High current capability\n• High efficiency due to less heat generation\n• Smaller Printed-Circuit Board (PCB) area than for conventional transistors\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

Package：SC-74，SOT-457；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 50V 3A 6TSOP

NEXPERIA

安世

Package：SC-74，SOT-457；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 50V 3A 6TSOP

NEXPERIA

安世