丝印：53；Package：SC-74；50 V, 3 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350D-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High current capability • High efficiency due to less heat gene

文件：219.55 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

50 V, 3 A PNP low VCEsat transistor

• Low collector-emitter saturation voltage VCEsat\n• High current capability\n• High efficiency due to less heat generation\n• Smaller Printed-Circuit Board (PCB) area than for conventional transistors\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

50 V, 3 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4350PAS 2. Features and benefits • DFN2020D-3 (SOT1061D) package • Low collector-emitter saturati

文件：283.44 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

50 V, 3 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4350PAS-Q 2. Features and benefits • DFN2020D-3 (SOT1061D) package • Low collector-emitter satura

文件：284.65 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

High power dissipation (830 mW)

DESCRIPTION PNP low VCEsat transistor in a SOT54 plastic package. NPN complement: PBSS4350S. FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 3 A continuous current • High current switching • Improved device reliability due to reduced heat g

文件：74.76 Kbytes 页数：8 Pages

PHI

飞利浦