丝印：G4；Package：SOT1061D；50 V, 3 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4350PAS-Q 2. Features and benefits • DFN2020D-3 (SOT1061D) package • Low collector-emitter satura

文件：284.65 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

50 V, 3 A PNP low VCEsat transistor

PNP low VCEsat transistor in DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.\n NPN complement: PBSS4350PAS-Q

Nexperia

安世

High power dissipation (830 mW)

DESCRIPTION PNP low VCEsat transistor in a SOT54 plastic package. NPN complement: PBSS4350S. FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 3 A continuous current • High current switching • Improved device reliability due to reduced heat g

文件：74.76 Kbytes 页数：8 Pages

PHI

飞利浦

50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：696.38 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司