PBSS5330PA

30 V, 3 A PNP low VCEsat transistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistor,encapsulatedinanultrathinSOT1061leadlesssmallSurface-MountedDevice(SMD)plasticpackagewithmediumpowercapability. NPNcomplement:PBSS4330PA. Featuresandbenefits •Lowcollector-emittersaturatio

ETC

PBSS5330PA

丝印：AJ；Package：DFN2020-3；30 V, 3 A PNP low VCEsat (BISS) transistor

1.Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistor,encapsulatedinan ultrathinSOT1061leadlesssmallSurface-MountedDevice(SMD)plasticpackagewith mediumpowercapability. NPNcomplement:PBSS4330PA. 2.Featuresandbenefits •Lowcollector-emitter

PBSS5330PA

30 V, 3 A PNP low VCEsat (BISS) transistor;

General description\nPNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.NPN complement: PBSS4330PA.Features and benefits\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n• Exposed heat sink for excellent thermal and electrical conductivity\n• Leadless small SMD plastic package with medium power capability

恩XP

PBSS5330PAS

30 V, 3 A PNP low VCEsat (BISS) transistor;

General description\nPNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads.NPN complement: PBSS4330PASFeatures and benefits\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High efficiency due to less heat generation\n• High temperature applications up to 175 °C\n• Reduced Printed-Circuit Board (PCB) area requirements\n• Leadless small SMD plastic package with soldarable side pads\n• Exposed heat sink for excellent thermal and electrical conductivity\n• Suitable for Automatic Optical Inspection (AOI) of solder joint\n• AEC-Q101 qualified

恩XP

PBSS5330PAS

30 V, 3 A PNP low VCEsat (BISS) transistor; • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High efficiency due to less heat generation\n• High temperature applications up to 175 °C\n• Reduced Printed-Circuit Board (PCB) area requirements\n• Leadless small SMD plastic package with soldarable side pads\n• Exposed heat sink for excellent thermal and electrical conductivity\n• Suitable for Automatic Optical Inspection (AOI) of solder joint\n• AEC-Q101 qualified\n;

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads.\n NPN complement: PBSS4330PAS\n

PBSS5330PAS

丝印：E2；Package：DFN2020D-3；30 V, 3 A PNP low VCEsat (BISS) transistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistor,encapsulatedinanultrathinDFN2020D-3(SOT1061D)leadlesssmallSurface-MountedDevice(SMD)plasticpackagewithmediumpowercapabilityandvisibleandsoldarablesidepads. NPNcomplement:PBSS4330PAS Featu

PBSS5330X

30 V, 3 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNPlowVCEsattransistorinaSOT89plasticpackage. FEATURES •SOT89(SC-62)package •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapability:ICandICM •Higherefficiencyleadingtolessheatgeneration •Reducedprinted-circuitboardrequiremen

PHI

PBSS5330X

丝印：1S；Package：SOT89；30 V, 3 A PNP low VCEsat (BISS) transistor

FEATURES •SOT89(SC-62)package •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapability:ICandICM •Higherefficiencyleadingtolessheatgeneration •Reducedprinted-circuitboardrequirements. APPLICATIONS •Powermanagement –DC/DCconverters –Supplylines

PBSS5330PA_15

30 V, 3 A PNP low VCEsat (BISS) transistor

PHI

PBSS5330PAS_15

30 V, 3 A PNP low VCEsat (BISS) transistor

PHI