30 V, 3 A PNP low VCEsat transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4330PA. Features and benefits • Low collector-emitter saturatio

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丝印：AJ；Package：DFN2020-3；30 V, 3 A PNP low VCEsat (BISS) transistor

1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4330PA. 2. Features and benefits • Low collector-emitter

文件：709.22 Kbytes 页数：16 Pages

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安世

丝印：E2；Package：DFN2020D-3；30 V, 3 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. NPN complement: PBSS4330PAS Featu

文件：735.73 Kbytes 页数：18 Pages

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安世

丝印：1S；Package：SOT89；30 V, 3 A PNP low VCEsat (BISS) transistor

FEATURES •SOT89 (SC-62) package •Low collector-emitter saturation voltage VCEsat •High collector current capability: IC and ICM •Higher efficiency leading to less heat generation •Reduced printed-circuit board requirements. APPLICATIONS •Power management –DC/DC converters –Supply line s

文件：422.4 Kbytes 页数：13 Pages

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安世

30 V, 3 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP low VCEsat transistor in a SOT89 plastic package. FEATURES • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit board requiremen

文件：104.52 Kbytes 页数：12 Pages

PHI

飞利浦

30 V, 3 A PNP low VCEsat (BISS) transistor

文件：223.53 Kbytes 页数：16 Pages

PHI

飞利浦

30 V, 3 A PNP low VCEsat (BISS) transistor

文件：255.91 Kbytes 页数：18 Pages

PHI

飞利浦

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

30 V, 3 A PNP low VCEsat (BISS) transistor

文件：195.74 Kbytes 页数：12 Pages

PHI

飞利浦

30 V, 3 A PNP low VCEsat (BISS) transistor

General description\nPNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.NPN complement: PBSS4330PA.Features and benefits\n• Low collector-emitter saturation volt

恩XP