PBSS5330PA

30 V, 3 A PNP low VCEsat transistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistor,encapsulatedinanultrathinSOT1061leadlesssmallSurface-MountedDevice(SMD)plasticpackagewithmediumpowercapability. NPNcomplement:PBSS4330PA. Featuresandbenefits •Lowcollector-emittersaturatio

PBSS5330PA

Marking：AJ；Package：DFN2020-3；30 V, 3 A PNP low VCEsat (BISS) transistor

1.Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistor,encapsulatedinan ultrathinSOT1061leadlesssmallSurface-MountedDevice(SMD)plasticpackagewith mediumpowercapability. NPNcomplement:PBSS4330PA. 2.Featuresandbenefits •Lowcollector-emitter

PBSS5330PAS

Marking：E2；Package：DFN2020D-3；30 V, 3 A PNP low VCEsat (BISS) transistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistor,encapsulatedinanultrathinDFN2020D-3(SOT1061D)leadlesssmallSurface-MountedDevice(SMD)plasticpackagewithmediumpowercapabilityandvisibleandsoldarablesidepads. NPNcomplement:PBSS4330PAS Featu

PBSS5330X

30 V, 3 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNPlowVCEsattransistorinaSOT89plasticpackage. FEATURES •SOT89(SC-62)package •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapability:ICandICM •Higherefficiencyleadingtolessheatgeneration •Reducedprinted-circuitboardrequiremen

PBSS5330X

Marking：1S；Package：SOT89；30 V, 3 A PNP low VCEsat (BISS) transistor

FEATURES •SOT89(SC-62)package •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapability:ICandICM •Higherefficiencyleadingtolessheatgeneration •Reducedprinted-circuitboardrequirements. APPLICATIONS •Powermanagement –DC/DCconverters –Supplylines

PBSS5330PA_15

30 V, 3 A PNP low VCEsat (BISS) transistor

PBSS5330PAS_15

30 V, 3 A PNP low VCEsat (BISS) transistor

PBSS5330X

Low VCEsat (BISS) transistors

PBSS5330X_15

30 V, 3 A PNP low VCEsat (BISS) transistor

PBSS5330PA,135

Package：3-PowerUDFN；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 30V 3A 3HUSON

Nexperia USA Inc.