丝印：1S；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES High collector to base voltage VCBO High collector to emitter voltage VCEO Large collector power dissipation PC Low collector to emitter saturation voltage VCE(sat)

文件：1.472 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：1S；Package：SC-79；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in an SOD523 (SC-79) ultra small and flat lead Surface- Mounted Device (SMD) plastic package. 2. Features and benefits • Total power dissipation: ≤ 300 mW • Tolerance series: approximately ± 5 • Working voltage range: nominal 1.8

文件：221.41 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：1S；Package：SOD523；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in an SOD523 (SC-79) ultra small and flat lead Surface- Mounted Device (SMD) plastic package. 2. Features and benefits • Total power dissipation: ≤ 300 mW • Tolerance series: approximately ± 5 • Working voltage range: nominal 1.8

文件：222.33 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：1S；Package：DFN0603；1-Line Bi-directional TVS Diode

Features Ultra low capacitance: 0.5pF typical Ultra low leakage: nA level Low operating voltage: 3.3V Low clamping voltage 2-pin leadless package Complies with following standards: IEC 61000-4-2 (ESD) immunity test Air discharge: ±20kV Contact discharge: ±15kV IEC61000-4-5 (Lightning) 5A

文件：719.92 Kbytes 页数：4 Pages

LEIDITECH

雷卯电子

丝印：1S；Package：DFN0603；1-Line Bi-directional TVS Diode

Features Ultra low capacitance: 0.5pF typical Ultra low leakage: nA level Low operating voltage: 3.3V Low clamping voltage 2-pin leadless package Complies with following standards: IEC 61000-4-2 (ESD) immunity test Air discharge: ±20kV Contact discharge: ±15kV IEC61000-4-5 (Lightning) 5A

文件：719.92 Kbytes 页数：4 Pages

LEIDITECH

雷卯电子

丝印：1S；Package：SOT886；ESD protection for high-speed interfaces

1.1 General description The device is designed to protect high-speed interfaces such as USB 2.0, Ethernet and Digital Visual Interface (DVI) against ElectroStatic Discharge (ESD). The device includes four high-level ESD protection diode structures for high-speed signal lines and is encapsulate

文件：290.67 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：1S；Package：SOT-23；NPN Switching Transistor

NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21.

文件：198.06 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：1S；Package：SOT-23；NPN Switching Transistor

NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21.

文件：520.409 Kbytes 页数：14 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：1S；Package：SOT-23-5；High-Speed, Rail-to-Rail Input, CMOS Comparator

FEATURES (V+ = 5V, Typical value, Ta = 25°C)  Propagation Delay (TPLH / TPHL) - NJU7725x 42ns / 35ns - NJU7726x 125ns / 32ns  Rail-to-Rail Common-Mode Input Voltage Range 0.2V beyond Supply Rails  Dynamic Transient Stabilizer TM - Rail-to-Rail Input with less propagation delay fluctuat

文件：2.060969 Mbytes 页数：31 Pages

NISSHINBO

日清纺微电子

丝印：1S；Package：SC-75；40 V, 500 mA NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability: IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：285.96 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司