2SD2413

Marking：1S；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES HighcollectortobasevoltageVCBO HighcollectortoemittervoltageVCEO LargecollectorpowerdissipationPC LowcollectortoemittersaturationvoltageVCE(sat)

BZX58550-C3V6

Marking：1S；Package：SC-79；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanSOD523(SC-79)ultrasmallandflatleadSurface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤300mW •Toleranceseries:approximately±5 •Workingvoltagerange:nominal1.8

BZX58550-C3V6-Q

Marking：1S；Package：SOD523；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanSOD523(SC-79)ultrasmallandflatleadSurface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤300mW •Toleranceseries:approximately±5 •Workingvoltagerange:nominal1.8

ESD3V3S1B-02LS

Marking：1S；Package：DFN0603；1-Line Bi-directional TVS Diode

Features Ultralowcapacitance:0.5pFtypical Ultralowleakage:nAlevel Lowoperatingvoltage:3.3V Lowclampingvoltage 2-pinleadlesspackage Complieswithfollowingstandards: IEC61000-4-2(ESD)immunitytest Airdischarge:±20kV Contactdischarge:±15kV IEC61000-4-5(Lightning)5A

ESD8111PFCT5G

Marking：1S；Package：DFN0603；1-Line Bi-directional TVS Diode

Features Ultralowcapacitance:0.5pFtypical Ultralowleakage:nAlevel Lowoperatingvoltage:3.3V Lowclampingvoltage 2-pinleadlesspackage Complieswithfollowingstandards: IEC61000-4-2(ESD)immunitytest Airdischarge:±20kV Contactdischarge:±15kV IEC61000-4-5(Lightning)5A

IP4221CZ6-S

Marking：1S；Package：SOT886；ESD protection for high-speed interfaces

1.1Generaldescription Thedeviceisdesignedtoprotecthigh-speedinterfacessuchasUSB2.0,Ethernetand DigitalVisualInterface(DVI)againstElectroStaticDischarge(ESD). Thedeviceincludesfourhigh-levelESDprotectiondiodestructuresforhigh-speedsignal linesandisencapsulate

MMBT2369A

Marking：1S；Package：SOT-23；NPN Switching Transistor

NPNSwitchingTransistor Thisdeviceisdesignedforhighspeedsaturationswitchingatcollectorcurrentsof10mAto100mA.SourcedfromProcess21.

MMBT2369A

Marking：1S；Package：SOT-23；NPN Switching Transistor

NPNSwitchingTransistor Thisdeviceisdesignedforhighspeedsaturationswitchingatcollectorcurrentsof10mAto100mA.SourcedfromProcess21.

NJU77250F

Marking：1S；Package：SOT-23-5；High-Speed, Rail-to-Rail Input, CMOS Comparator

FEATURES (V+=5V,Typicalvalue,Ta=25°C) PropagationDelay(TPLH/TPHL) -NJU7725x42ns/35ns -NJU7726x125ns/32ns Rail-to-RailCommon-ModeInputVoltageRange 0.2VbeyondSupplyRails DynamicTransientStabilizerTM -Rail-to-RailInputwithlesspropagationdelay fluctuat

PBSS2540E

Marking：1S；Package：SC-75；40 V, 500 mA NPN low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *Highcollectorcurrentcapability:ICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors