丝印：1S；Package：SC-75；40 V, 500 mA NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability: IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：285.96 Kbytes 页数：12 Pages

NEXPERIA

安世

40 V, 500 mA NPN low VCEsat (BISS) transistor

文件：172.09 Kbytes 页数：11 Pages

恩XP

40 V, 500 mA NPN low VCEsat (BISS) transistor

NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package.\n PNP complement: PBS3540E.

Nexperia

安世

40 V low V NPN transistor

DESCRIPTION NPN low VCEsat transistor in a SC-89 (SOT490) plastic package. PNP complement: PBSS3540F. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved thermal behaviour due to flat leads • Enhanced performance over SOT23 general purpose transistors.

文件：63.63 Kbytes 页数：8 Pages

PHI

飞利浦

40 V, 0.5 A NPN low VCEsat (BISS) transistor

DESCRIPTION Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package. PNP complement: PBSS3540M. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency leading to reduced heat generation • Reduced printed

文件：73.29 Kbytes 页数：9 Pages

PHI

飞利浦