PBSS2540M

40 V, 0.5 A NPN low VCEsat (BISS) transistor

DESCRIPTION LowVCEsatNPNtransistorinaSOT883leadlessultrasmallplasticpackage. PNPcomplement:PBSS3540M. FEATURES •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highefficiencyleadingtoreducedheatgeneration •Reducedprinted

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PBSS2540M

40 V, 0.5 A NPN low VCEsat (BISS) transistor

DESCRIPTION LowVCEsatNPNtransistorinaSOT883leadlessultrasmallplasticpackage. PNPcomplement:PBSS3540M. FEATURES •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highefficiencyleadingtoreducedheatgeneration •Reducedprinted

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PBSS2540M

丝印：DC；Package：DFN1006-3；40 V, 0.5 A NPN low VCEsat (BISS) transistor

1.Generaldescription LowVCEsatNPNtransistorinaSOT883leadlessultrasmallplasticpackage. PNPcomplement:PBSS3540M. 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highefficiencyleadingtoreducedheat

PBSS2540M

40 V, 0.5 A NPN low VCEsat (BISS) transistor; • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High efficiency leading to reduced heat generation\n• Reduced printed-circuit board requirements.\n• AEC-Q101 qualified\n;

Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package.\n PNP complement: PBSS3540M.\n

PBSS2540MB

40 V, 0.5 A NPN low VCEsat (BISS) transistor; • Leadless ultra small SMD plastic package\n• Low package height of 0.37 mm\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High efficiency due to less heat generation\n• AEC-Q101 qualified\n• Reduced Printed-Circuit Board (PCB) requirements\n;

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3540MB.\n

PBSS2540MB

丝印：PBSS2540MB；Package：DFN1006B-3；40 V, 0.5 A NPN low VCEsat (BISS) transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS3540MB. Featuresandbenefits ■LeadlessultrasmallSMDplastic package ■Lowpackageheight

PBSS2540M,315

Package：SC-101，SOT-883；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 40V 0.5A SOT883

ETC

PBSS2540MB,315

Package：3-XFDFN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 40V 0.5A DFN1006B-3

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