40 V, 0.5 A NPN low VCEsat (BISS) transistor

DESCRIPTION Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package. PNP complement: PBSS3540M. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency leading to reduced heat generation • Reduced printed

文件：73.29 Kbytes 页数：9 Pages

PHI

飞利浦

40 V, 0.5 A NPN low VCEsat (BISS) transistor

DESCRIPTION Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package. PNP complement: PBSS3540M. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency leading to reduced heat generation • Reduced printed

文件：150.07 Kbytes 页数：9 Pages

恩XP

丝印：DC；Package：DFN1006-3；40 V, 0.5 A NPN low VCEsat (BISS) transistor

1. General description Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package. PNP complement: PBSS3540M. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency leading to reduced heat

文件：182.14 Kbytes 页数：10 Pages

NEXPERIA

安世

丝印：PBSS2540MB；Package：DFN1006B-3；40 V, 0.5 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3540MB. Features and benefits ■ Leadless ultra small SMD plastic package ■ Low package height

文件：1.18302 Mbytes 页数：12 Pages

NEXPERIA

安世

40 V, 0.5 A NPN low VCEsat (BISS) transistor

Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package.\n PNP complement: PBSS3540M. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High efficiency leading to reduced heat generation\n• Reduced printed-circuit board requirements.\n• AEC-Q101 qualified;

Nexperia

安世

40 V, 0.5 A NPN low VCEsat (BISS) transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3540MB. • Leadless ultra small SMD plastic package\n• Low package height of 0.37 mm\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High efficiency due to less heat generation\n• AEC-Q101 qualified\n• Reduced Printed-Circuit Board (PCB) requirements;

Nexperia

安世

Package：SC-101，SOT-883；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 40V 0.5A SOT883

Nexperia USA Inc.

Package：3-XFDFN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 40V 0.5A DFN1006B-3

Nexperia USA Inc.