40 V low V NPN transistor

DESCRIPTION NPN low VCEsat transistor in a SC-89 (SOT490) plastic package. PNP complement: PBSS3540F. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved thermal behaviour due to flat leads • Enhanced performance over SOT23 general purpose transistors.

文件：63.63 Kbytes 页数：8 Pages

PHI

PHI

40 V low V NPN transistor

恩XP

40 V, 0.5 A NPN low VCEsat (BISS) transistor

DESCRIPTION Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package. PNP complement: PBSS3540M. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency leading to reduced heat generation • Reduced printed

文件：73.29 Kbytes 页数：9 Pages

PHI

PHI

40 V, 0.5 A NPN low VCEsat (BISS) transistor

1. General description Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package. PNP complement: PBSS3540M. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency leading to reduced heat

文件：182.14 Kbytes 页数：10 Pages

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