30 V, 3 A PNP low VCEsat transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4330PA. Features and benefits • Low collector-emitter saturatio

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恩XP

丝印：AJ；Package：DFN2020-3；30 V, 3 A PNP low VCEsat (BISS) transistor

1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4330PA. 2. Features and benefits • Low collector-emitter

文件：709.22 Kbytes 页数：16 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：E2；Package：DFN2020D-3；30 V, 3 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. NPN complement: PBSS4330PAS Featu

文件：735.73 Kbytes 页数：18 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

30 V, 3 A PNP low VCEsat (BISS) transistor

文件：223.53 Kbytes 页数：16 Pages

PHI

飞利浦

30 V, 3 A PNP low VCEsat (BISS) transistor

文件：255.91 Kbytes 页数：18 Pages

PHI

飞利浦

30 V, 3 A PNP low VCEsat (BISS) transistor

General description\nPNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.NPN complement: PBSS4330PA.Features and benefits\n• Low collector-emitter saturation volt

恩XP

恩智浦

30 V, 3 A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.\n NPN complement: PBSS4330PA. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n• Exposed heat sink for excellent thermal and electrical conductivity\n• Leadless small SMD plastic package with m;

Nexperia

安世

30 V, 3 A PNP low VCEsat (BISS) transistor

General description\nPNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads.NPN complement: PBSS4330PASFeatures an

恩XP

恩智浦

Package：3-PowerUDFN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 30V 3A 3HUSON

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Package：3-PowerUDFN；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 30V 3A 3HUSON

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司