丝印：E2；Package：DFN2020D-3；30 V, 3 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. NPN complement: PBSS4330PAS Featu

文件：735.73 Kbytes 页数：18 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

30 V, 3 A PNP low VCEsat (BISS) transistor

文件：255.91 Kbytes 页数：18 Pages

PHI

飞利浦

30 V, 3 A PNP low VCEsat (BISS) transistor

General description\nPNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads.NPN complement: PBSS4330PASFeatures an

恩XP

恩智浦

30 V, 3 A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads.\n NPN complement: PBSS4330PAS • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High efficiency due to less heat generation\n• High temperature applications up to 175 °C\n• Reduced Printed-Circuit Board (PCB) area requirements\n• L;

Nexperia

安世

30 V, 3 A PNP low VCEsat transistor

PNP low VCEsat transistor, encapsulated in an DFN2020D-3 (SOT1061D) ultra thin leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads.\n NPN complement: PBSS4330PAS-Q

Nexperia

安世

Package：3-UDFN 裸露焊盘；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 30V 3A DFN2020D-3

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司