Package：3-UDFN 裸露焊盘；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 30V 3A DFN2020D-3

Nexperia USA Inc.

30 V, 3 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP low VCEsat transistor in a SOT89 plastic package. FEATURES • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit board requiremen

文件：104.52 Kbytes 页数：12 Pages

PHI

飞利浦

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

30 V, 3 A PNP low VCEsat (BISS) transistor

FEATURES •SOT89 (SC-62) package •Low collector-emitter saturation voltage VCEsat •High collector current capability: IC and ICM •Higher efficiency leading to less heat generation •Reduced printed-circuit board requirements. APPLICATIONS •Power management –DC/DC converters –Supply line s

文件：422.4 Kbytes 页数：13 Pages

NEXPERIA

安世