30 V, 3 A PNP low VCEsat transistor

PNP low VCEsat transistor, encapsulated in an DFN2020D-3 (SOT1061D) ultra thin leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads.\n NPN complement: PBSS4330PAS-Q

Nexperia

安世

30 V, 3 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP low VCEsat transistor in a SOT89 plastic package. FEATURES • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit board requiremen

文件：104.52 Kbytes 页数：12 Pages

PHI

飞利浦

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

30 V, 3 A PNP low VCEsat (BISS) transistor

FEATURES •SOT89 (SC-62) package •Low collector-emitter saturation voltage VCEsat •High collector current capability: IC and ICM •Higher efficiency leading to less heat generation •Reduced printed-circuit board requirements. APPLICATIONS •Power management –DC/DC converters –Supply line s

文件：422.4 Kbytes 页数：13 Pages

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