40 V, 2 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS4240T. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standard packaged

文件：76.67 Kbytes 页数：9 Pages

PHI

PHI

丝印：ZF；Package：SOT23；40 V, 2 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4240T 2. Features and benefits • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced h

文件：980 Kbytes 页数：9 Pages

NEXPERIA

安世

丝印：ZF；Package：SOT23；40 V, 2 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4240T-Q 2. Features and benefits • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced

文件：207.75 Kbytes 页数：9 Pages

NEXPERIA

安世

丝印：52；Package：SOT666；40 V low VCEsat PNP transistor

1. General description PNP transistor providing low VCEsat and high current capability in a SOT666 ultra small Surface- Mounted Device (SMD) plastic package. NPN complement: PBSS4240V 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capabi

文件：219.9 Kbytes 页数：10 Pages

NEXPERIA

安世

40 V low VCEsat PNP transistor

DESCRIPTION PNP transistor providing low VCEsat and high current capability in a SOT666 plastic package. NPN complement: PBSS4240V. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain (hFE) at high IC • High

文件：82.76 Kbytes 页数：12 Pages

PHI

PHI

40 V low VCEsat PNP transistor

DESCRIPTION PNP transistor providing low VCEsat and high current capability in a SOT666 plastic package. NPN complement: PBSS4240V. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain (hFE) at high IC • High

文件：368.83 Kbytes 页数：9 Pages

恩XP

丝印：S48；Package：SOT89；40 V, 2 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4240X. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capa

文件：687.07 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：52；Package：SOT363；40 V low VCEsat PNP transistor

FEATURES •Low collector-emitter saturation voltage •High current capability •Improved device reliability due to reduced heat generation •Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance. APPLICATIONS •Supply line switching circuits •Battery management

文件：324.34 Kbytes 页数：8 Pages

NEXPERIA

安世

40 V low VCEsat PNP transistor

DESCRIPTION PNP low VCEsat transistor in a SOT363 (SC-88) plastic package. NPN complement: PBSS4240Y. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standard packag

文件：125.06 Kbytes 页数：7 Pages

恩XP

40 V low VCEsat PNP transistor

DESCRIPTION PNP low VCEsat transistor in a SOT363 (SC-88) plastic package. NPN complement: PBSS4240Y. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standard packag

文件：49.19 Kbytes 页数：8 Pages

PHI

PHI