PBSS5240T

40 V, 2 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNPlowVCEsattransistorinaSOT23plasticpackage. NPNcomplement:PBSS4240T. FEATURES •Lowcollector-emittersaturationvoltage •Highcurrentcapability •Improveddevicereliabilityduetoreducedheat generation •ReplacementforSOT89/SOT223standardpackaged

PBSS5240T

丝印：ZF；Package：SOT23；40 V, 2 A PNP low VCEsat transistor

1.Generaldescription PNPlowVCEsattransistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS4240T 2.Featuresandbenefits •Lowcollector-emittersaturationvoltage •Highcurrentcapability •Improveddevicereliabilityduetoreducedh

PBSS5240T-Q

丝印：ZF；Package：SOT23；40 V, 2 A PNP low VCEsat transistor

1.Generaldescription PNPlowVCEsattransistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS4240T-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltage •Highcurrentcapability •Improveddevicereliabilityduetoreduced

PBSS5240T-Q

40 V, 2 A PNP low VCEsat transistor; • Low collector-emitter saturation voltage\n• High current capability\n• Improved device reliability due to reduced heat generation\n• Qualified according to AEC-Q101 and recommended for use in automotive applications\n;

PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS4240T-Q\n

PBSS5240V

40 V low VCEsat PNP transistor

DESCRIPTION PNPtransistorprovidinglowVCEsatandhighcurrentcapabilityinaSOT666plasticpackage. NPNcomplement:PBSS4240V. FEATURES •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorcurrentgain(hFE)athighIC •High

PBSS5240V

丝印：52；Package：SOT666；40 V low VCEsat PNP transistor

1.Generaldescription PNPtransistorprovidinglowVCEsatandhighcurrentcapabilityinaSOT666ultrasmallSurface- MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS4240V 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapabi

PBSS5240X

丝印：S48；Package：SOT89；40 V, 2 A PNP low VCEsat (BISS) transistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinamediumpowerandflatleadSOT89Surface-MountedDevice(SMD)plasticpackage.NPNcomplement:PBSS4240X. Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapa

PBSS5240Y

40 V low VCEsat PNP transistor

DESCRIPTION PNPlowVCEsattransistorinaSOT363(SC-88)plasticpackage. NPNcomplement:PBSS4240Y. FEATURES •Lowcollector-emittersaturationvoltage •Highcurrentcapability •Improveddevicereliabilityduetoreducedheat generation •ReplacementforSOT89/SOT223standardpackag

PBSS5240Y

丝印：52；Package：SOT363；40 V low VCEsat PNP transistor

FEATURES •Lowcollector-emittersaturationvoltage •Highcurrentcapability •Improveddevicereliabilityduetoreducedheatgeneration •ReplacementforSOT89/SOT223standardpackagedtransistorsduetoenhancedperformance. APPLICATIONS •Supplylineswitchingcircuits •Batterymanagement

PBSS5240Z

丝印：S5240Z；Package：SC-73；40 V, 2 A PNP low VCEsat (BISS) transistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinamediumpowerSOT223(SC-73)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS4240Z Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapabilit