丝印：ZF；Package：SOT23；40 V, 2 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4240T-Q 2. Features and benefits • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced

文件：207.75 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

40 V, 2 A PNP low VCEsat transistor

PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS4240T-Q • Low collector-emitter saturation voltage\n• High current capability\n• Improved device reliability due to reduced heat generation\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

40 V low VCEsat PNP transistor

DESCRIPTION PNP transistor providing low VCEsat and high current capability in a SOT666 plastic package. NPN complement: PBSS4240V. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain (hFE) at high IC • High

文件：82.76 Kbytes 页数：12 Pages

PHI

飞利浦

40 V low VCEsat PNP transistor

1. General description PNP transistor providing low VCEsat and high current capability in a SOT666 ultra small Surface- Mounted Device (SMD) plastic package. NPN complement: PBSS4240V 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capabi

文件：219.9 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司