40 V low VCEsat PNP transistor

DESCRIPTION PNP transistor providing low VCEsat and high current capability in a SOT666 plastic package. NPN complement: PBSS4240V. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain (hFE) at high IC • High

文件：82.76 Kbytes 页数：12 Pages

PHI

飞利浦

40 V low VCEsat PNP transistor

DESCRIPTION PNP transistor providing low VCEsat and high current capability in a SOT666 plastic package. NPN complement: PBSS4240V. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain (hFE) at high IC • High

文件：368.83 Kbytes 页数：9 Pages

恩XP

丝印：52；Package：SOT666；40 V low VCEsat PNP transistor

1. General description PNP transistor providing low VCEsat and high current capability in a SOT666 ultra small Surface- Mounted Device (SMD) plastic package. NPN complement: PBSS4240V 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capabi

文件：219.9 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PNP Transistors

文件：1.59295 Mbytes 页数：5 Pages

KEXIN

科信电子

40 V low VCEsat PNP transistor

文件：368.83 Kbytes 页数：9 Pages

PHI

飞利浦

40 V low VCEsat PNP transistor

PNP transistor providing low VCEsat and high current capability in a SOT666 plastic package. NPN complement: PBSS4240V. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE ) at high IC\n• High efficiency leading to reduced heat generation\n• Reduced printed-circuit board area requirements.\n• AEC-Q101 qualified;

Nexperia

安世

Package：SOT-563，SOT-666；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 40V 1.8A SOT666

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司