40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET

General description Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench Metal-Oxide Semiconductor Field- Effect Transistor (MOSFET). The device is housed in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. Fea

文件：839.21 Kbytes 页数：20 Pages

恩XP

丝印：PBSS2540MB；Package：DFN1006B-3；40 V, 0.5 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3540MB. Features and benefits ■ Leadless ultra small SMD plastic package ■ Low package height

文件：1.18302 Mbytes 页数：12 Pages

NEXPERIA

安世

丝印：PBSS3540MB；Package：SOT883B；40 V, 0.5 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS2540MB. Features and benefits ■ Leadless ultra small SMD plastic package ■ Low package height of 0.37 mm ■

文件：1.15198 Mbytes 页数：12 Pages

NEXPERIA

安世

M - Rugged Ratchet coupling

文件：78.45 Kbytes 页数：4 Pages

LEMO

雷莫

F - Rugged Push-Pull

文件：166.04 Kbytes 页数：4 Pages

LEMO

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M - Rugged Ratchet coupling

文件：79.73 Kbytes 页数：4 Pages

LEMO

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M - Rugged Ratchet coupling

文件：78.86 Kbytes 页数：4 Pages

LEMO

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F - Rugged Push-Pull

文件：160.33 Kbytes 页数：4 Pages

LEMO

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F - Rugged Push-Pull

文件：155.36 Kbytes 页数：4 Pages

LEMO

雷莫

F - Rugged Push-Pull

文件：93.46 Kbytes 页数：4 Pages

LEMO

雷莫