Small Pocket Enclosures 2 versions available

DESIGN FEATURES Small pocket-boxes are durable and versatile units with a high sealing capacity. Cases feature a recessed control area for membrane keyboards. Two screw pillars prepared for mounting PCBs in the base and an integrated battery compartment for two 1.5V AAA cells. Black Infra-re

文件：1.69637 Mbytes 页数：1 Pages

BOX

Small Pocket Enclosures 2 versions available

DESIGN FEATURES Small pocket-boxes are durable and versatile units with a high sealing capacity. Cases feature a recessed control area for membrane keyboards. Two screw pillars prepared for mounting PCBs in the base and an integrated battery compartment for two 1.5V AAA cells. Black Infra-re

文件：1.69637 Mbytes 页数：1 Pages

BOX

Small Pocket Enclosures 2 versions available

DESIGN FEATURES Small pocket-boxes are durable and versatile units with a high sealing capacity. Cases feature a recessed control area for membrane keyboards. Two screw pillars prepared for mounting PCBs in the base and an integrated battery compartment for two 1.5V AAA cells. Black Infra-re

文件：1.69637 Mbytes 页数：1 Pages

BOX

Small Pocket Enclosures 2 versions available

DESIGN FEATURES Small pocket-boxes are durable and versatile units with a high sealing capacity. Cases feature a recessed control area for membrane keyboards. Two screw pillars prepared for mounting PCBs in the base and an integrated battery compartment for two 1.5V AAA cells. Black Infra-re

文件：1.69637 Mbytes 页数：1 Pages

BOX

丝印：1T；Package：DFN2020-6；40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET

1.1 General description Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench Metal-Oxide Semiconductor Field- Effect Transistor (MOSFET). The device is housed in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic packag

文件：1.44438 Mbytes 页数：20 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET

General description Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench Metal-Oxide Semiconductor Field- Effect Transistor (MOSFET). The device is housed in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. Fea

文件：839.21 Kbytes 页数：20 Pages

恩XP

15 V low VCEsat NPN double transistor

DESCRIPTION NPN low VCEsat double transistor in a SOT666 plastic package. PNP complement: PBSS3515VS. FEATURES • 300 mW total power dissipation • Very small 1.6 x 1.2 mm ultra thin package • Excellent coplanarity due to straight leads • Low collector-emitter saturation voltage • High

文件：69.97 Kbytes 页数：12 Pages

PHI

飞利浦

15 V, 0.5 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in an ultra small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High collector current g

文件：128.07 Kbytes 页数：12 Pages

恩XP

丝印：1Q；Package：SC-75；15 V, 0.5 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：242.93 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

15 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsat transistor in a SC-89 (SOT490) plastic package. PNP complement: PBSS3515F. FEATURES • Low collector-emitter saturation voltage • High current capabilities • Improved thermal behaviour due to flat leads. APPLICATIONS • General purpose switching and muting • Low f

文件：66.92 Kbytes 页数：8 Pages

PHI

飞利浦