PBSS2515YPN

Marking：N8；Package：TSSOP6；15 V low VCEsat NPN/PNP transistor

1.Generaldescription NPN/PNPlowVCEsattransistorpairinaSOT363(SC-88)verysmallSurface-MountedDevice (SMD)plasticpackage.. 2.Featuresandbenefits •Lowcollector-emittersaturationvoltage •Highcurrentcapability •ReplacestwoSC-70packagedlowVCEsattransistorsonsam

PBSS2515YPN-Q

Marking：N8；Package：TSSOP6；15 V low VCEsat NPN/PNP transistor

1.Generaldescription NPN/PNPlowVCEsattransistorpairinaSOT363(SC-88)verysmallSurface-MountedDevice (SMD)plasticpackage.. 2.Featuresandbenefits •Lowcollector-emittersaturationvoltage •Highcurrentcapability •ReplacestwoSC-70packagedlowVCEsattransistorsonsam

PBSS2540E

Marking：1S；Package：SC-75；40 V, 500 mA NPN low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *Highcollectorcurrentcapability:ICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

PBSS2540F

40 V low V NPN transistor

DESCRIPTION NPNlowVCEsattransistorinaSC-89(SOT490)plasticpackage. PNPcomplement:PBSS3540F. FEATURES •Lowcollector-emittersaturationvoltage •Highcurrentcapability •Improvedthermalbehaviourduetoflatleads •EnhancedperformanceoverSOT23generalpurposetransistors.

PBSS2540M

40 V, 0.5 A NPN low VCEsat (BISS) transistor

DESCRIPTION LowVCEsatNPNtransistorinaSOT883leadlessultrasmallplasticpackage. PNPcomplement:PBSS3540M. FEATURES •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highefficiencyleadingtoreducedheatgeneration •Reducedprinted

PBSS2540M

Marking：DC；Package：DFN1006-3；40 V, 0.5 A NPN low VCEsat (BISS) transistor

1.Generaldescription LowVCEsatNPNtransistorinaSOT883leadlessultrasmallplasticpackage. PNPcomplement:PBSS3540M. 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highefficiencyleadingtoreducedheat

PBSS2540MB

Marking：PBSS2540MB；Package：DFN1006B-3；40 V, 0.5 A NPN low VCEsat (BISS) transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS3540MB. Featuresandbenefits ■LeadlessultrasmallSMDplastic package ■Lowpackageheight

PBSS301ND

Marking：C6；Package：SC-74；20 V, 4 A NPN low VCEsat (BISS) transistor

1.1Generaldescription NPNlowVCEsatBreakthroughinSmallSignal(BISS)transistorinaSOT457(SC-74) Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS301PD. 1.2Features *Verylowcollector-emittersaturationresistance *Ultralowcollector-emittersaturationvoltag

PBSS301ND

20 V, 4 A NPN low VCEsat (BISS) transistor

Generaldescription NPNlowVCEsatBreakthroughinSmallSignal(BISS)transistorinaSOT457(SC-74)SMDplasticpackage. PNPcomplement:PBSS301PD. Features ■Verylowcollector-emittersaturationresistance ■Ultralowcollector-emittersaturationvoltage ■4Acontinuouscollectorcurren

PBSS301NX

Marking：5B；Package：SC-62；12 V, 5.3 A NPN low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors