PBSM5240PFH

Marking：1T；Package：DFN2020-6；40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET

1.1Generaldescription CombinationofPNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorand N-channelTrenchMetal-OxideSemiconductorField-EffectTransistor(MOSFET).The deviceishousedinaleadlessmediumpowerDFN2020-6(SOT1118)Surface-Mounted Device(SMD)plasticpackag

PBSM5240PFH,115

Package：6-UFDFN 裸露焊盘；包装：管件 类别：分立半导体产品 晶体管 - 特殊用途 描述：TRANS PNP/N CH 40V 1.8A 6HUSON

Nexperia USA Inc.

PBSS5240T

LowVCEsat(BISS)transistors

PBSS5240T

40V,2APNPlowVCEsat(BISS)transistor

DESCRIPTION PNPlowVCEsattransistorinaSOT23plasticpackage. NPNcomplement:PBSS4240T. FEATURES •Lowcollector-emittersaturationvoltage •Highcurrentcapability •Improveddevicereliabilityduetoreducedheat generation •ReplacementforSOT89/SOT223standardpackaged

PBSS5240T

40V,2APNPlowVCEsattransistor

1.Generaldescription PNPlowVCEsattransistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS4240T 2.Featuresandbenefits •Lowcollector-emittersaturationvoltage •Highcurrentcapability •Improveddevicereliabilityduetoreducedh

PBSS5240T-Q

40V,2APNPlowVCEsattransistor

1.Generaldescription PNPlowVCEsattransistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS4240T-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltage •Highcurrentcapability •Improveddevicereliabilityduetoreduced

PBSS5240V

40VlowVCEsatPNPtransistor

DESCRIPTION PNPtransistorprovidinglowVCEsatandhighcurrentcapabilityinaSOT666plasticpackage. NPNcomplement:PBSS4240V. FEATURES •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorcurrentgain(hFE)athighIC •High

PBSS5240V

40VlowVCEsatPNPtransistor

1.Generaldescription PNPtransistorprovidinglowVCEsatandhighcurrentcapabilityinaSOT666ultrasmallSurface- MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS4240V 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapabi

PBSS5240X

40V,2APNPlowVCEsat(BISS)transistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinamediumpowerandflatleadSOT89Surface-MountedDevice(SMD)plasticpackage.NPNcomplement:PBSS4240X. Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapa

PBSS5240Y

40VlowVCEsatPNPtransistor

DESCRIPTION PNPlowVCEsattransistorinaSOT363(SC-88)plasticpackage. NPNcomplement:PBSS4240Y. FEATURES •Lowcollector-emittersaturationvoltage •Highcurrentcapability •Improveddevicereliabilityduetoreducedheat generation •ReplacementforSOT89/SOT223standardpackag