40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET

General description Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench Metal-Oxide Semiconductor Field- Effect Transistor (MOSFET). The device is housed in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. Fea

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恩XP

丝印：1T；Package：DFN2020-6；40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET

1.1 General description Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench Metal-Oxide Semiconductor Field- Effect Transistor (MOSFET). The device is housed in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic packag

文件：1.44438 Mbytes 页数：20 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Package：6-UFDFN 裸露焊盘；包装：管件 类别：分立半导体产品 晶体管 - 特殊用途 描述：TRANS PNP/N CH 40V 1.8A 6HUSON

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

40 V, 2 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS4240T. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standard packaged

文件：76.67 Kbytes 页数：9 Pages

PHI

飞利浦

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

40 V, 2 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4240T 2. Features and benefits • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced h

文件：980 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司