PBSS2540M

丝印：DC；Package：DFN1006-3；40 V, 0.5 A NPN low VCEsat (BISS) transistor

1.Generaldescription LowVCEsatNPNtransistorinaSOT883leadlessultrasmallplasticpackage. PNPcomplement:PBSS3540M. 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highefficiencyleadingtoreducedheat

PBSS2540M

40 V, 0.5 A NPN low VCEsat (BISS) transistor

DESCRIPTION LowVCEsatNPNtransistorinaSOT883leadlessultrasmallplasticpackage. PNPcomplement:PBSS3540M. FEATURES •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highefficiencyleadingtoreducedheatgeneration •Reducedprinted

ETC

PBSS2540MB

丝印：PBSS2540MB；Package：DFN1006B-3；40 V, 0.5 A NPN low VCEsat (BISS) transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS3540MB. Featuresandbenefits ■LeadlessultrasmallSMDplastic package ■Lowpackageheight

PBSS301ND

丝印：C6；Package：SC-74；20 V, 4 A NPN low VCEsat (BISS) transistor

1.1Generaldescription NPNlowVCEsatBreakthroughinSmallSignal(BISS)transistorinaSOT457(SC-74) Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS301PD. 1.2Features *Verylowcollector-emittersaturationresistance *Ultralowcollector-emittersaturationvoltag

PBSS301ND

20 V, 4 A NPN low VCEsat (BISS) transistor

Generaldescription NPNlowVCEsatBreakthroughinSmallSignal(BISS)transistorinaSOT457(SC-74)SMDplasticpackage. PNPcomplement:PBSS301PD. Features ■Verylowcollector-emittersaturationresistance ■Ultralowcollector-emittersaturationvoltage ■4Acontinuouscollectorcurren

PHI

PBSS301NX

丝印：5B；Package：SC-62；12 V, 5.3 A NPN low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

PBSS301NZ

丝印：S301NZ；Package：SC-73；12 V, 5.8 A NPN low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

PBSS301NZ

12 V, 5.8 A NPN low VCEsat (BISS) transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS301PZ. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICan

ETC

PBSS301PD

丝印：C8；Package：SC-74；20 V, 4 A PNP low VCEsat (BISS) transistor

1.1Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT457(SC-74) Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS301ND. 1.2Features *Verylowcollector-emittersaturationresistance *Ultralowcollector-emittersaturationvoltag

PBSS301PX

丝印：5H；Package：SC-62；12 V, 5.3 A PNP low VCEsat (BISS) transistor

1.1Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT89 (SC-62/TO-243)smallandflatleadSurface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS301NX. 1.2Features ..Lowcollector-emittersaturationvoltageVCEsat ..Highcollectorcur