PBS

Electronic Pressure Switch

Description: ThePBSisanelectronicpressureswitch,pressuretransmitteranddisplayinone.Itisavailablewithuptotwoswitchingoutput,analogoutputandIO-Linkinasingledevice. Itsintuitiveconfigurationviathreelargepushbuttonsanddisplayfacilitatesoperation.Thehousingca

PBSM5240PFH

Marking：1T；Package：DFN2020-6；40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET

1.1Generaldescription CombinationofPNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorand N-channelTrenchMetal-OxideSemiconductorField-EffectTransistor(MOSFET).The deviceishousedinaleadlessmediumpowerDFN2020-6(SOT1118)Surface-Mounted Device(SMD)plasticpackag

PBSS2515

15 V low VCEsat NPN double transistor

DESCRIPTION NPNlowVCEsatdoubletransistorinaSOT666plasticpackage. PNPcomplement:PBSS3515VS. FEATURES •300mWtotalpowerdissipation •Verysmall1.6x1.2mmultrathinpackage •Excellentcoplanarityduetostraightleads •Lowcollector-emittersaturationvoltage •High

PBSS2515E

Marking：1Q；Package：SC-75；15 V, 0.5 A NPN low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

PBSS2515F

15 V low VCEsat NPN transistor

DESCRIPTION NPNlowVCEsattransistorinaSC-89(SOT490)plasticpackage. PNPcomplement:PBSS3515F. FEATURES •Lowcollector-emittersaturationvoltage •Highcurrentcapabilities •Improvedthermalbehaviourduetoflatleads. APPLICATIONS •Generalpurposeswitchingandmuting •Lowf

PBSS2515M

Marking：S2；Package：SOT883；15 V, 0.5 A NPN low VCEsat (BISS) transistor

FEATURES •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highefficiencyleadingtoreducedheatgeneration •Reducedprinted-circuitboardrequirements. APPLICATIONS •Powermanagement: –DC-DCconverter –Supplylineswitching –Batterycharg

PBSS2515VPN

Marking：N8；Package：SOT666；15 V low VCE(sat) NPN/PNP transistor

FEATURES •300mWtotalpowerdissipation •Verysmall1.6×1.2mmultrathinpackage •Excellentcoplanarityduetostraightleads •Lowcollector-emittersaturationvoltage •Highcurrentcapability •Improvedthermalbehaviourduetoflatlead •ReplacestwoSC75/SC89packagedlowVCEsattrans

PBSS2515VS

Marking：N9；Package：SOT666；15 V low VCEsat NPN double transistor

1.Generaldescription NPNlowVCEsatdoubletransistorinaSOT666ultrasmallandflatleadSurface-MountedDevice (SMD)plasticpackage. PNPcomplement:PBSS3515VS 2.Featuresandbenefits •300mWtotalpowerdissipation •Verysmall1.6x1.2mmultrathinpackage •Excellentcoplana

PBSS2515VS

15 V low VCEsat NPN double transistor

DESCRIPTION NPNlowVCEsatdoubletransistorinaSOT666plasticpackage. PNPcomplement:PBSS3515VS. FEATURES •300mWtotalpowerdissipation •Verysmall1.6x1.2mmultrathinpackage •Excellentcoplanarityduetostraightleads •Lowcollector-emittersaturationvoltage •High

PBSS2515YPN

15 V low VCE(sat) NPN/PNP transistor

DESCRIPTION NPN/PNPlowVCEsattransistorpairinaSC-88plasticpackage. FEATURES •Lowcollector-emittersaturationvoltage •Highcurrentcapability •ReplacestwoSC-70packagedlowVCEsattransistorson samePCBarea •ReducesrequiredPCBarea •Reducedpickandplacecosts. APP